MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
50
10 V
I D
T j = 25 C
(A)
40
30
20
10
0
0
0.2
0.4
0.6
T
= 25 C
j
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
30
V GS = 5 V
T j = 25 C
R DSon
(m )
20
10
0
0
10
20
T
= 25 C
j
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
9397 750 12544
Product data
03am54
6 V
5.6 V
5.4 V
5.2 V
5 V
4.8 V
4.6 V
4.4 V
V GS = 4.2 V
0.8
1
V DS (V)
Fig 6. Transfer characteristics: drain current as a
03am55
5.2 V
5.4 V
5.6 V
6 V
10 V
30
40
50
I D (A)
Fig 8. Normalized drain-source on-state resistance
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
80
V DS > I D x R DSon
I D
(A)
60
40
20
175 C
0
0
2
4
T
= 25 C and 175 C; V
I
x R
j
DS
D
DSon
function of gate-source voltage; typical values.
3
a
2.5
2
1.5
1
0.5
0
-60
0
60
120
R
DSon
a
=
---------------------------- -
R
DSon 25 C
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
03am56
T j = 25 C
6
V GS (V)
03al21
180
T j ( C)
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