IXFN55N50F IXYS RF, IXFN55N50F Datasheet
IXFN55N50F
Manufacturer Part Number
IXFN55N50F
Description
MOSFET, N, RF, SOT-227B
Manufacturer
IXYS RF
Datasheet
1.IXFN55N50F.pdf
(2 pages)
Specifications of IXFN55N50F
Transistor Type
RF MOSFET
Drain Source Voltage Vds
500V
Continuous Drain Current Id
55A
Power Dissipation Max
600W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
SOT-227B
No. Of Pins
4
Package / Case
ISOTOP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
DGR
AR
AS
D
J
JM
stg
J
DSS
GS
GSM
ISOL
d
GH(th)
DSS
DS(on)
Test Conditions
Test Conditions
S
ISOL
C
C
C
C
C
C
J
J
J
DS
GS
GS
DS
GS
GS
TM
rr
DM
GS
DSS
D
D
DC
D
G
g,
DS
Low Intrinsic R
D25
GS
DD
J
J
DSS
J
Advance Technical Information
JM
g
IXFN 55N50F
min.
Characteristic Values
Maximum Ratings
typ.
S
G
max.
D
S
miniBLOC, SOT-227 B
G = Gate
S = Source
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
RF capable Mosfets
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
V
I
R
t
D25
rr
DSS
DS(on)
E153432
250 ns
=
=
=
G
D = Drain
S
500
55
85 m
D
98854 (8/01)
S
V
A
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IXFN55N50F Summary of contents
Page 1
TM HiPerRF Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q Low Intrinsic R g, High dV/dt, Low t rr Symbol Test Conditions V DSS J V DGR GSM I D25 C I ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...