IXFH12N50F IXYS RF, IXFH12N50F Datasheet
IXFH12N50F
Manufacturer Part Number
IXFH12N50F
Description
MOSFET, N, RF, TO-247AD
Manufacturer
IXYS RF
Datasheet
1.IXFH12N50F.pdf
(2 pages)
Specifications of IXFH12N50F
Transistor Type
RF MOSFET
Drain Source Voltage Vds
500V
Continuous Drain Current Id
12A
Power Dissipation Max
180W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
TO-247AD
No. Of Pins
3
Package / Case
TO-247AD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH12N50F
Manufacturer:
IXYS
Quantity:
18 000
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
Note 1
Low t
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V
= ±20 V, V
= 0.8 • V
= 10 V, I
TM
DM
rr
GS
, di/dt £ 100 A/ms, V
Low Q
D
D
D
DSS
= 0.5 • I
G
DS
= 2 W
= 0
g
, Low Intrinsic R
TO-264
TO-247
TO-264
D25
GS
= 1 MW
DD
(T
£ V
T
J
J
= 25°C, unless otherwise specified)
DSS
= 125°C
JM
Advanced Technical Information
g
min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.4/6 Nm/lb.in.
500
500
±20
±30
300
180
150
300
12
48
12
20
5
max.
±100 nA
0.4 W
50 mA
6
4
1 mA
V/ns
mJ
mJ
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
g
V
I
R
t
TO-247 AD (IXFH)
G = Gate,
S = Source,
l
l
l
l
l
l
l
Applications
l
l
l
l
l
l
l
Advantages
l
l
D25
rr
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Space savings
High power density
DSS
DS(on)
£ 250 ns
(IXFT)
DS (on)
G
HDMOS
= 500 V
=
= 0.4 W
D = Drain,
TAB = Drain
S
TM
12 A
process
98737 (07/00)
(TAB)
(TAB)
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IXFH12N50F Summary of contents
Page 1
TM HiPerRF Power MOSFETs F-Class: MegaHertz Switching Low Q , Low Intrinsic R g Low t rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...