IXZ210N50L IXYS RF, IXZ210N50L Datasheet

MOSFET, N, RF, DE275

IXZ210N50L

Manufacturer Part Number
IXZ210N50L
Description
MOSFET, N, RF, DE275
Manufacturer
IXYS RF
Datasheet

Specifications of IXZ210N50L

Drain Source Voltage Vds
500V
Continuous Drain Current Id
10A
Power Dissipation Max
470W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE275
No. Of Pins
6
Transistor Type
RF MOSFET
Package / Case
DE-275
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOS
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
V
T
I
T
25°C
T
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
JM
c
c
DSS
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by
= 25°C
= 25°C
= 25°C, Derate 6.0W/°C above
= 25°C
=0
= 0 V, I
= V
= ±20 V
= 0.8V
= 20 V, I
= 50 V, I
,
DM
, di/dt ≤  1 00A/µs, V
GS
, I
DSS
D
D
DC
D
D
= 4 ma
= 250µΑ
G
, V
= 0.5I
= 0.5I
= 0.2Ω
DS
= 0
D25
D25
GS
, pulse test
T
= 1 MΩ
T
J
J
DD
= 25C
=125C
TM
MOSFET Process
IXZ210N50L IXZ2210N50L
min.
0.32
0.57
500
470
235
10
-55
-55
3.5
Maximum Ratings
>200
TBD
500
500
±20
±30
10
60
16
5
4.95
typ.
300
1.0
3.8
4
0.16
0.29
940
470
10
+ 175
max.
±100
+175
+175
6.5
50
1
V/ns
V/ns
IXZ210N50L & IXZ2210N50L
C/W
C/W
mA
mJ
nA
µA
°C
°C
°C
°C
W
W
W
V
V
V
V
A
A
A
V
V
S
g
RF Power MOSFET
Features
Advantages
(1) Thermal specifications are for the pack-
age, not per transistor
Isolated Substrate
IXYS RF Low Capacitance Z-MOS
Process
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
High Performance RF Package
Easy to mount—no insulators needed
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
V
I
D25
DSS
150V (operating)
300 & 550 Watts
175MHz
=
=
500 V
10 A
TM

Related parts for IXZ210N50L

IXZ210N50L Summary of contents

Page 1

... N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ210N50L single ended device unless otherwise noted. Symbol Test Conditions T = 25°C to 150° DSS T = 25° ...

Page 2

... VDD= 150V, Pout=300W, f=175MHz 3T MRI Gps(1) VDD=150V, P =475W, F=128MHz OUT Drain Efficiency VDD= 50V, Pout=200W, f=175MHz Zin= 0.59-J0.90 Zout= 5.86+J9.34 ( measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB. IXZ210N50L & IXZ2210N50L Characteristic Values ( T = 25°C unless otherwise specified) J 560 , 50 DSS(MAX) 10 DSS RF Power MOSFET min ...

Page 3

... IXZ210N50L Capacitance verses Vds 10000 1000 100 100 150 IXZ210N50L & IXZ2210N50L RF Power MOSFET Ciss Coss \ Crss 200 250 300 Vds in Volts 350 400 ...

Page 4

... IXZ210N50L & IXZ2210N50L mag S21 ang S21 0.01 72.80 64.02 152.19 0.01 50.41 54.88 136.18 0.01 36.03 46.48 125.23 0.02 33.42 39.80 117.56 ...

Page 5

... IXZ210N50L & IXZ2210N50L mag S21 ang S21 0.01 51.67 98.32 135.58 0.01 41.71 76.78 120.80 0.01 26.40 61.88 111.89 0.01 20.78 51.39 105.98 0.01 17.69 43 ...

Page 6

... IXZ210N50L & IXZ2210N50L RF Power MOSFET mag S12 ang S12 mag S22 ang S22 2.988 / 87.481 0.469 / -104.432 2.418 / 75.537 0.627 / -110.792 1.824 / 62.952 0.756 / -124.821 1.406 / 55.303 0.806 / -134 ...

Page 7

... IXZ210N50L & IXZ2210N50L RF Power MOSFET mag S21 ang S21 mag S22 ang S22 4.123 / 80.919 0.437 / -122.05 3.213 / 71.151 0.550 / -122.51 2.409 / 60.370 0.679 / -131.24 1 ...

Page 8

... IXZ210N50L & IXZ2210N50L RF Power MOSFET mag S21 ang S21 mag S22 ang S22 4.942 / 77.820 0.435 / -137.513 0.505 / -134.339 3.815 / 69.106 0.618 / -137.849 2.890 / 58.963 ...

Page 9

... IXZ210N50L & IXZ2210N50L 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 6,583,505 6,710,463 6,727,585 RF Power MOSFET Doc #dsIXZ210N50L REV 06/04 © 2004 IXYS RF A IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com ...

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