IXZ2210N50L IXYS RF, IXZ2210N50L Datasheet

IXZ2210N50L

Manufacturer Part Number

IXZ2210N50L

Description

MOSFET, N, RF, 754

Manufacturer

IXYS RF

Datasheet

1.IXZ2210N50L.pdf (9 pages)

Specifications of IXZ2210N50L

Drain Source Voltage Vds

500V

Continuous Drain Current Id

10A

Power Dissipation Max

470W

Operating Temperature Range

-55Â°C To +175Â°C

No. Of Pins

Gain Bandwidth Ft Min

175MHz

Transistor Type

RF MOSFET

Package / Case

DE-275X2

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Symbol

dv/dt

Weight

thJC

thJHS

Test Conditions

≤

µΑ

Ω

≤

Ω

≤

min.

Maximum Ratings

typ.

max.

IXZ210N50L & IXZ2210N50L

Ω

RF Power MOSFET

Features

•

−

•

Advantages

•

500 V

10 A

Related parts for IXZ2210N50L

IXZ2210N50L Summary of contents

Page 1

... thJC R thJHS V V µΑ ≤ µ Weight Maximum Ratings Ω ≤ min. typ. max. ≤ IXZ210N50L & IXZ2210N50L RF Power MOSFET Features • − − − • µ • • Ω Advantages • • 500 ...

Page 2

... Symbol Test Conditions Ω T VHF COMMUNICATIONS 3T MRI IXZ210N50L & IXZ2210N50L RF Power MOSFET Characteristic Values min. typ. min. typ. 13 min. typ. 12 max. max. max. ...