IXZ308N120 IXYS RF, IXZ308N120 Datasheet
IXZ308N120
Manufacturer Part Number
IXZ308N120
Description
MOSFET, N, RF, DE375
Manufacturer
IXYS RF
Datasheet
1.IXZ308N120.pdf
(3 pages)
Specifications of IXZ308N120
Drain Source Voltage Vds
1.2kV
Continuous Drain Current Id
8A
Power Dissipation Max
880W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE375
No. Of Pins
6
Transistor Type
RF MOSFET
Package / Case
DE-375
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Lo Capacitance Z-MOS
Low Capacitance Z-MOS
Optimized for Linear Operation
Optimized for RF Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Ideal for Class C, D, & E Applications
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
≤ 150°C, R
= 0
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 4.4W/°C above 25°C
= 25°C
=0
DM
= 0 V, I
= V
= ±20 V
= 0.8V
= 20 V, I
= 50 V, I
, di/dt ≤ 1 00A/µs, V
GS
, I
DSS
D
D
DC
D
D
G
= 4 ma
= 250µΑ
, V
= 0.5I
= 0.5I
= 0.2Ω
DS
= 0
D25
D25
TM
GS
, pulse test
TM
= 1 MΩ
T
MOSFET Process
T
J
DD
J
MOSFET Process
= 25C
=125C
≤ V
DSS
JM
,
1200
min.
-55
-55
3.5
10.1
typ.
175
300
2.1
3.5
Maximum Rat-
1200
1200
>200 V/ns
TBD
0.17 C/W
0.34 C/W
±20
±30
880
440
3.0
+ 175
40
max.
+175
±100
8
8
5 V/ns
6.5
50
1
ings
mJ
Z-MOS RF Power MOSFET
W
W
W
V
V
V
V
A
A
A
mA
nA
µA
°C
°C
°C
°C
Ω
V
V
S
g
GATE
IXZ308N120
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
SG1
Isolated Substrate
IXYS advanced Z-MOS process
Low gate charge and capacitances
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
Low R
V
I
R
P
D25
SG2
DSS
DC
DS(on)
DS(on)
=
=
=
=
SD1
1200 V
880 W
2.1 Ω
8.0 A
SD2
DRAIN
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IXZ308N120 Summary of contents
Page 1
... V 5 V/ns , DSS >200 V/ns 880 440 3.0 0.17 C/W 0.34 C/W min. typ. max. 1200 3.5 6.5 ±100 = 25C 50 =125C 2.1 10.1 -55 +175 175 -55 + 175 300 3.5 IXZ308N120 Z-MOS RF Power MOSFET V = DSS I = D25 R = DS(on) ings GATE W W SG1 SG2 Features • ...
Page 2
... Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. 1960 , 59 DSS(max) 9 DSS 4 6 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. TBD 4,891,686 4,931,844 5,187,117 5,237,481 6,583,505 6,710,463 IXZ308N120 Z-MOS RF Power MOSFET max. Ω max. 8 Α 1 5,017,508 5,486,715 6,727,585 ...
Page 3
... IXZ308N120 Capacitances verses Vds Z-MOS RF Power MOSFET Ciss Coss Crss 600 800 Vds in Volts IXZ308N120 1000 1200 Doc #dsIXZ308N12 REV 06/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf ...