IXFT28N50F IXYS RF, IXFT28N50F Datasheet
IXFT28N50F
Manufacturer Part Number
IXFT28N50F
Description
MOSFET, N, RF, TO-268AA
Manufacturer
IXYS RF
Datasheet
1.IXFT28N50F.pdf
(2 pages)
Specifications of IXFT28N50F
Drain Source Voltage Vds
500V
Continuous Drain Current Id
28A
Power Dissipation Max
315W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
TO-268
No. Of Pins
3
Transistor Type
RF MOSFET
Package / Case
TO-268
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT28N50F
Manufacturer:
IXYS
Quantity:
15 500
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
d
DSS
DS(on)
Test Conditions
V
Test Conditions
V
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
GS
DS
= V
= 0 V, I
TM
DM
rr
GS
DSS
, I
D
D
= 4mA
= 1mA
D
G
DS
g
, Low Intrinsic R
D25
GS
DD
J
J
DSS
JM
Advance Technical Information
g
500
min.
IXFH 28N50F
IXFT 28N50F
2.0
Characteristic Values
Maximum Ratings
typ.
max.
4.0
V
V
V
I
R
t
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
Features
l
l
l
l
l
Applications
l
l
l
l
l
l
l
Advantages
l
l
D25
G = Gate,
S = Source,
rr
RF capable MOSFETs
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
DSS
DS(on)
250 ns
G
= 500V
=
= 190m
S
D = Drain,
TAB = Drain
28A
98883 (1/02)
(TAB)
(TAB)
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IXFT28N50F Summary of contents
Page 1
TM HiPerRF Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g High dV/dt, Low t rr Symbol Test Conditions V DSS J V DGR GSM I D25 C ...
Page 2
Symbol Test Conditions D25 C iss C oss rss t d(on d(off g(on thJC R thCK Source-Drain ...