DE275X2-102N06A IXYS RF, DE275X2-102N06A Datasheet
DE275X2-102N06A
Manufacturer Part Number
DE275X2-102N06A
Description
MOSFET, N, RF, DE275X2
Manufacturer
IXYS RF
Datasheet
1.DE275X2-102N06A.pdf
(4 pages)
Specifications of DE275X2-102N06A
Transistor Type
RF MOSFET
Drain Source Voltage Vds
1kV
Continuous Drain Current Id
16A
Power Dissipation Max
1.18kW
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE275X2
No. Of Pins
8
Package / Case
DE-275X2
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a
common source configuration. The device is optimized for push-pull or paral-
lel operation in RF generators and amplifiers at frequencies to >65 MHz.
Unless noted, specifications are for each output device
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
Symbol
V
V
I
I
R
g
R
R
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
♦
♦
♦
♦
♦
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
DS(on)
thJC
thJHS
(1)
(1)
(1)
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Q
High dv/dt
Nanosecond Switching
(1)
(1)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm (0.063 in) from case for 10 s
g
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
and R
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 5.0W/°C above 25°C
= 25°C
= V
= 0.8 V
= 15 V, I
= 0 V, I
= ±20 V
= 0
= 15 V, I
DM
, di/dt ≤ 1 00A/µs, V
GS
, I
g
D
DSS
D
DC
D
D
= 3 ma
G
= 4 ma
, V
= 0.5I
= 0.5I
T
T
= 0.2Ω
J
J
DS
= 25°C
= 125°C
= 0
D25
D25
GS
, pulse test
= 1 MΩ
DD
≤ V
DSS
JM
,
Characteristic Values
T
J
= 25°C unless otherwise specified
1000
min.
-55
-55
2.5
2
0.25
0.50
typ.
Maximum Ratings
175
300
7.5
4
>200
1000
1000
1180
max.
±100
+175
+175
±20
±30
750
5.0
16
48
20
5.5
1.6
50
6
5
1
V/ns
V/ns
C/W
C/W
mA
mJ
nA
µA
W
W
W
°C
°C
°C
°C
V
V
V
V
A
A
A
Ω
V
V
S
g
DE275X2-102N06A
RF Power MOSFET
GATE 1
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
•
Note: All specifications are per each
transistor, unless otherwise noted.
(1)
package, not per transistor
SG1
Thermal specifications are for the
Isolated Substrate
IXYS advanced low Q
Low gate charge and capacitances
Low R
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
High Performance Push-Pull RF
Package
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
V
I
R
P
SD1
D25
DRAIN 1
DSS
DC
DS(on)
DS(on)
=
=
=
= 1180 W
DRAIN 2
g
process
SD2
1000 V
0.8 Ω
16 A
SG2
GATE 2
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DE275X2-102N06A Summary of contents
Page 1
... High dv/dt ♦ Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral- lel operation in RF generators and amplifiers at frequencies to >65 MHz. Unless noted, specifications are for each output device ...
Page 2
... Characteristic Values (T = 25°C unless otherwise specified) J min. typ. max. 0.3 1800 , 130 Characteristic Values (T = 25°C unless otherwise specified) J min. typ. max 1.5 200 0.6 4 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE275X2-102N06A RF Power MOSFET Ω µC A ...
Page 3
... Vol t s 275X2-102N06A Capacitances vs Vds DE275X2-102N06A RF Power MOSFET Ciss Coss Crss 700 800 900 1000 ...
Page 4
... C OSS 10 DRAIN 4 Doff Roff D1crs D2crs Ron 2 Don 7 30 SOURCE Figure 1 DE-SERIES SPICE Model DE275X2-102N06A RF Power MOSFET . Rd is the R of the device, Rds D DS(ON Dcos Rds Ls Doc #9200-0224 Rev 3 © 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 ...