IXFK24N100F IXYS RF, IXFK24N100F Datasheet
IXFK24N100F
Manufacturer Part Number
IXFK24N100F
Description
MOSFET, N, RF, TO-264
Manufacturer
IXYS RF
Datasheet
1.IXFK24N100F.pdf
(4 pages)
Specifications of IXFK24N100F
Transistor Type
RF MOSFET
Drain Source Voltage Vds
1kV
Continuous Drain Current Id
24A
Power Dissipation Max
560W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
TO-264
No. Of Pins
3
Package / Case
TO-264
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK24N100F
Manufacturer:
IXYS
Quantity:
200
© 2002 IXYS All rights reserved
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D 2 5
D M
A R
G S S
D S S
D G R
G S
J
J M
s t g
L
D S S
G S M
A R
D
G S ( t h )
A S
D S S
D S ( o n )
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
V
V
V
V
V
Test Conditions
V
S
Note 1
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= ±20 V, V
= V
= 0 V
= 10 V, I
= V
= 0 V, I
I
150 C, R
DM
TM
DSS
GS
, di/dt 100 A/ s, V
rr
, I
D
D
D
= 1mA
= 8mA
= 0.5 • I
DS
G
= 2
= 0
g
, Low Intrinsic R
TO-264
PLUS 247
TO-264
D25
GS
= 1 M
DD
(T
T
T
J
J
V
J
DSS
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
IXFX 24N100F
IXFK 24N100F
g
1000
Characteristic Values
min.
3.0
Maximum Ratings
-55 ... +150
-55 ... +150
typ. m a x .
1000
1000
0.4/6 Nm/lb.in.
560
150
300
3.0
20
30
24
96
24
60
10
10
6
±200 nA
100 mA
0.39
5.5 V
3 mA
V/ns
mJ
W
C
C
C
C
V
V
V
V
A
A
A
g
g
V
J
V
I
R
t
Features
Applications
Advantages
PLUS 247
TO-264 AA (IXFK)
G = Gate
S = Source
rr
D25
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Pulse generation
Laser drivers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
PLUS 247
mounting
Space savings
High power density
DSS
DS(on)
250 ns
G
TM
TM
D
G
package for clip or spring
(IXFX)
D
= 1000 V
=
=
S
D = Drain
TAB = Drain
0.39
98874-A(8/02)
24 A
(TAB)
(TAB)
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IXFK24N100F Summary of contents
Page 1
TM HiPerRF Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g High dV/dt, Low t rr Symbol Test Conditions 150 ...
Page 2
Symbol Test Conditions 0.5 • D25 MHz ...
Page 3
Fig. 1. Output Characteristics 10V Volts DS Fig ...
Page 4
Fig. 7. Gate Charge Characteristic Curve 500V 12A 100 150 200 Gate Charge - nC Fig. 9. Source Current vs. Source to Drain Voltage ...