IXZR08N120A IXYS RF, IXZR08N120A Datasheet
IXZR08N120A
Specifications of IXZR08N120A
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IXZR08N120A Summary of contents
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... D25 DS(on) Pulse test, t ≤ 300µS, duty cycle d ≤ 0.5I , pulse test D25 stg 1.6mm(0.063 in) from case for Weight IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Maximum Rat- ings 1200 V 1200 V ±20 V ± TBD mJ 5 V/ns , DSS >200 V/ns TBD ...
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... IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,835,592 4,860,072 4,850,072 4,881,106 4,881,106 5,034,796 5,034,796 5,049,961 5,049,961 5,063,307 5,063,307 5,381,025 5,381,025 5,640,045 5,640,045 6,404,065 6,404,065 6,731,002 6,731,002 IXZR08N120 & IXZR08N120A/B Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. 1960 , 59 DSS(max) 9 DSS 4 6 Characteristic Values ( T = 25° ...
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... IXZ308N120 Capacitances verses Vds IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Ciss Coss Crss 600 800 Vds in Volts 1000 1200 Doc #dsIXZR08N120_A/B REV 07/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf ...