IXFK21N100F IXYS RF, IXFK21N100F Datasheet
IXFK21N100F
Manufacturer Part Number
IXFK21N100F
Description
MOSFET, N, RF, TO-264
Manufacturer
IXYS RF
Datasheet
1.IXFK21N100F.pdf
(2 pages)
Specifications of IXFK21N100F
Transistor Type
RF MOSFET
Drain Source Voltage Vds
1kV
Continuous Drain Current Id
21A
Power Dissipation Max
500W
Operating Temperature Range
-55°C To +150°C
Rf Transistor Case
TO-264
No. Of Pins
3
Package / Case
TO-264
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK21N100F
Manufacturer:
IXYS
Quantity:
200
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
d
DSS
DS(on)
Test Conditions
V
Test Conditions
V
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= V
= 0 V, I
TM
DM
GS
rr
DSS
, I
D
D
= 4mA
= 1mA
D
G
DS
g
, Low Intrinsic R
D25
GS
DD
J
J
J
DSS
JM
g
1000
min.
3.0
IXFX 21N100F
IXFK 21N100F
Characteristic Values
Maximum Ratings
typ.
max.
5.0 V
V
PLUS 247
Features
l
l
l
l
l
Applications
l
l
l
l
l
l
l
Advantages
l
l
l
TO-264 AA (IXFK)
G = Gate
S = Source
RF capable MOSFETs
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
V
R
I
t
D25
DSS
DS(on)
rr
G
TM
(IXFX)
D
TM
G
250 ns
= 1000 V
=
D
= 0.50
S
D = Drain
TAB = Drain
21 A
98880 (01/02)
(TAB)
(TAB)
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IXFK21N100F Summary of contents
Page 1
TM HiPerRF Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g High dV/dt, Low t rr Symbol Test Conditions V DSS J V DGR GSM ...
Page 2
Symbol Test Conditions D25 C iss C oss rss t d(on d(off g(on thJC R thCK Source-Drain ...