QEB421TR Fairchild Semiconductor, QEB421TR Datasheet
QEB421TR
Manufacturer Part Number
QEB421TR
Description
Infrared Emitters infrared LED SMD
Manufacturer
Fairchild Semiconductor
Datasheet
1.QEB421.pdf
(3 pages)
Specifications of QEB421TR
Beam Angle
+/- 120
Radiant Intensity
48 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
180 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lens Shape
Circular
Mounting Style
SMD/SMT
Operating Voltage
1.8 V
Wavelength
880 nm
Package / Case
PLCC-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DS300385
2001 Fairchild Semiconductor Corporation
ANODE
PARAMETER
Peak Emission Wavelength
Spectral Bandwidth
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Radiant Flux
Temp. Coeff. of I
Temp. Coeff. of V
Temp. Coeff. of
Rise Time
Fall Time
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL / OPTICAL CHARACTERISTICS
NOTES:
1. Dimensions are in inches (mm)
2. Tolerance of ± .010 (.25) on all non nominal dimensions
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)
Continuous Forward Current
Reverse Voltage
Peak Forward Current
Power Dissipation
0.134 (3.4)
0.118 (3.0)
unless otherwise specified.
2/26/01
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
E
F
0.024 (0.6)
0.016 (0.4)
(1)
Parameter
(4)
0.094 (2.4)
0.035 (0.9)
0.028 (0.7)
(2,3)
I
I
I
F
F
F
I
I
= 100 mA, tp = 20 ms
= 100 mA, tp = 20 ms
= 100 mA, tp = 20 ms
F
F
TEST CONDITIONS
= 1 A, tp = 100 µ s
= 1 A, tp = 100 µ s
0.007 (.18)
0.005 (.12)
I
I
I
I
I
I
I
F
F
F
F
F
F
F
V
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
R
= 5 V
(T
A
0.043 (1.1)
0.020 (0.5)
= 25°C unless otherwise specified)
0.083 (2.1)
0.067 (1.7)
Symbol
0.041 (0.1)
T
T
T
I
V
P
I
FM
opr
stg
sol
F
R
D
260 for 10 sec
1 OF 3
SYMBOL
-55 to +100
-55 to +100
(T
T
T
T
V
I
Rating
I
C
t
t
CV
R
e
CI
P
r
f
F
1.75
A
e
100
180
• Wavelength = 880 nm, AlGaAs
• Wide Emission Angle, 120°
• Surface Mount PLCC-2 Package
• High Power
SURFACE MOUNT INFRARED
5
=25°C)
FEATURES
MIN.
—
—
—
—
—
—
—
—
—
—
—
—
—
4
LIGHT EMITTING DIODE
Unit
mW
mA
°C
°C
°C
V
A
0.25
TYP.
880
120
-0.5
1.5
3.0
80
48
10
—
—
—
—
-4
1. Derate power dissipation linearly
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
4. Pulse conditions; tp = 100 µ s,
NOTES
2.4 mW/°C above 25°C.
are recommended as cleaning
agents.
T = 10 ms.
MAX.
1.8
3.8
—
—
—
—
—
—
—
—
1
8
1
1
QEB421
CATHODE
www.fairchildsemi.com
SCHEMATIC
ANODE
mW/sr
UNITS
mV/K
nm/K
Deg.
%/K
mW
nm
nm
µ A
µ s
µ s
V
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QEB421TR Summary of contents
Page 1
... Radiant Flux I = 100 mA Temp. Coeff Temp. Coeff Temp. Coeff. of Rise Time Fall Time 2001 Fairchild Semiconductor Corporation DS300385 2/26/01 SURFACE MOUNT INFRARED 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) FEATURES 0.043 (1.1) • Wavelength = 880 nm, AlGaAs 0.020 (0.5) • Wide Emission Angle, 120° ...
Page 2
TYPICAL PERFORMANCE CURVES Fig. 1 Normalized Radiant Intensity vs. Forward Current 10 Normalized to 100 mA Pulsed =100 us Duty Cycle = 0. 25˚C A 0.1 0.01 0.001 ...
Page 3
... DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS ...