FODB101V Fairchild Semiconductor, FODB101V Datasheet

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FODB101V

Manufacturer Part Number
FODB101V
Description
High Speed Optocouplers Single Channel Microcoupler
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FODB101V

Input Type
DC
Isolation Voltage
2500 Vrms
Minimum Forward Diode Voltage
1 V
Output Device
Transistor
Configuration
1
Current Transfer Ratio
200 %
Maximum Baud Rate
120 KBps
Maximum Forward Diode Voltage
1.5 V
Maximum Reverse Diode Voltage
6 V
Maximum Input Diode Current
30 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.3
FODM121 Series, FODM124, FODM2701, FODM2705
4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Features
*option ‘V’ required
Package Dimensions
Note:
All dimensions are in millimeters.
2.00
0.10
35mm creepage/clearance
Compact 4-pin surface mount package
(2.4mm maximum standoff height)
Current Transfer Ratio in selected groups
DC Input:
FODM121: 50–600%
FODM121A: 100–300%
FODM121B: 50–150%
FODM121C: 100–200%
AC Input:
FODM2705: 50–300%
Available in tape and reel quantities of 2500
Applicable to Infrared Ray reflow (260°C max, 10 sec.)
C-UL, UL and VDE* certifications
±0.20
±0.10
2.54
3.85
0.40
±0.20
±0.10
4.40
FODM2701: 50–300%
FODM124: 100% MIN
±0.20
5.30
7.00
±0.30
+0.2
–0.7
Applications
Description
The FODM124, FODM121 series, and FODM2701
consists of a gallium arsenide infrared emitting diode
driving a phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 2.54mm. The FODM2705
consists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
0.20
Digital logic inputs
Microprocessor inputs
Power supply monitor
Twisted pair line receiver
Telephone line receiver
±0.05
CATHODE
CATHODE
FODM121, FODM124, FODM2701
ANODE
ANODE
Equivalent Circuit
Equivalent Circuit
2
2
1
1
FODM2705
4
3
4
3
COLLECTOR
EMITTER
COLLECTOR
EMITTER
www.fairchildsemi.com
April 2010

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FODB101V Summary of contents

Page 1

... Note: All dimensions are in millimeters. ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 Applications Digital logic inputs Microprocessor inputs Power supply monitor Twisted pair line receiver Telephone line receiver Description The FODM124, FODM121 series, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-fl ...

Page 2

... Reverse Current R DETECTOR BV Breakdown Voltage CEO Collector to Emitter BV Emitter to Collector ECO I Collector Dark CEO Current C Capacitance CE ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1 25°C unless otherwise specified) A Parameter FODM2701, FODM2705 FODM121 Series, FODM124 (T = 25°C) A Test Conditions Device I = 10mA FODM121 Series, F ...

Page 3

... Rise Time (Non-Saturated Fall Time (Non-Saturated) f Isolation Characteristics Characteristic (1) Steady State Isolation Voltage *All typicals 25°C A Note: 1. Steady state isolation voltage, V common, and pins 3 and 4 are common. ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 (Continued 25°C) A Test Conditions Device I = ±5mA FODM2705 5mA, V ...

Page 4

... Forward Current (mA) F Fig. 5 Collector Current vs. Ambient Temperature (FODM121/2701/2705) 100 I = 25mA 5mA 1mA 0.5mA F 0 0.01 -40 - Ambient Temperature (°C) A ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 0.35 0.30 0. 0.20 o -40 C 0.15 0.10 0.05 0.00 1.4 1.6 1.8 100 V = 10V 0.1 10 100 40 I ...

Page 5

... Load Resistance (kΩ) L Fig. 11 Current Transfer Ratio vs. Forward Current (FODM124 25° 0.5V CE 100 10 0 Forward Current (mA) F ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 160 140 120 100 60 80 100 120 0. 16mA F 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 0.01 ...

Page 6

... Fig. 15 Collector Dark Current vs. Ambient Temperature (FODM124 40V CE 10000 1000 100 10 1 0.1 -40 - Ambient Temperature (°C) A ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 Fig. 14 Collector Current vs. Collector-Emitter Voltage 60 80 100 120 160 140 120 100 60 80 100 120 Fig. 17 Switching Time vs. Load Resistance (FODM124 ...

Page 7

... Ordering Information Option V R2 R2V Marking Information Definitions ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 Description VDE Approved Tape and Reel (2500 units) Tape and Reel (2500 units) and VDE Approved 121 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...

Page 8

... Sprocket Hole Pitch Sprocket Hole Dia. Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimension Pocket Hole Dia. Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Devices Per Reel Reel Diameter ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1 Description Symbol ...

Page 9

... Footprint Drawing for PCB Layout ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 0.80 1.00 6.50 2.54 Note: All dimensions are in mm. 9 www.fairchildsemi.com ...

Page 10

... Liquidous Temperature (T Time (t ) Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2006 Fairchild Semiconductor Corporation FODMXXX Rev. 1.1.3 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...

Page 11

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower FRFET Auto-SPM Global Power Resource Build it Now Green FPS CorePLUS Green FPS CorePOWER Gmax ...

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