TIL111TM Fairchild Semiconductor, TIL111TM Datasheet
TIL111TM
Specifications of TIL111TM
Related parts for TIL111TM
TIL111TM Summary of contents
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... Microprocessor inputs Appliance sensor systems Industrial controls Schematic ANODE 1 CATHODE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 General Description The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. ...
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... Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Collector Voltage ECO V Emitter-Base Voltage EBO P Detector Power Dissipation @ T D Derate above 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Device All All All = 25°C All A All TIL111M MOC8100M, TIL117M All = 25 °C All ...
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... ECO Breakdown Voltage I Collector-Emitter Dark CEO Current I Collector-Base Dark CBO Current I CBO C Capacitance CE *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 16mA T = 25° 10mA for T = 0°C–70° ...
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... Operation) Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued 25°C unless otherwise specified.) A Test Conditions I = 10mA 10V 1mA MOC8100M F CE ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. Typ. ...
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... I F 0.4 0 0.2 0.1 0.0 10 100 R – BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ...
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... R – BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3 3.0 2.5 2.0 1.5 1.0 0 100 Fig. 10 Dark Current vs. Ambient Temperature vs ...
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... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...
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... TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Order Entry Identifier (Example) TIL111M Standard Through Hole Device TIL111SM Surface Mount Lead Bend TIL111SR2M Surface Mount; Tape and Reel TIL111TM 0.4" Lead Spacing TIL111VM VDE 0884 TIL111TVM VDE 0884, 0.4" Lead Spacing TIL111SVM VDE 0884, Surface Mount TIL111SR2VM ...
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... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...