Transistor Output Optocouplers 6-Pin Optocoupler Transistor Lo Pro

TIL111FR2VM

Manufacturer Part NumberTIL111FR2VM
DescriptionTransistor Output Optocouplers 6-Pin Optocoupler Transistor Lo Pro
ManufacturerFairchild Semiconductor
TIL111FR2VM datasheet
 


Specifications of TIL111FR2VM

Maximum Fall Time10 usMaximum Input Diode Current60 mA
Maximum Reverse Diode Voltage3 VMaximum Rise Time10 us
Output DevicePhototransistorOutput TypeDC
Configuration1 ChannelInput TypeDC
Maximum Collector Emitter Voltage30 VMaximum Collector Emitter Saturation Voltage0.4 V
Isolation Voltage5300 VrmsMaximum Forward Diode Voltage1.4 V
Maximum Power Dissipation250 mWMaximum Operating Temperature+ 100 C
Minimum Operating Temperature- 55 CPackage / CasePDIP-6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
UL recognized (File # E90700)
VDE recognized (File #102497 for white package)
– Add option V (e.g., TIL111VM)
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
Schematic
ANODE 1
CATHODE 2
NC 3
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
General Description
The MOC8100M, TIL111M and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
Package Outlines
6 BASE
5 COLLECTOR
4 EMITTER
September 2009
www.fairchildsemi.com

TIL111FR2VM Summary of contents

  • Page 1

    ... Microprocessor inputs Appliance sensor systems Industrial controls Schematic ANODE 1 CATHODE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 General Description The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. ...

  • Page 2

    ... Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Collector Voltage ECO V Emitter-Base Voltage EBO P Detector Power Dissipation @ T D Derate above 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Device All All All = 25°C All A All TIL111M MOC8100M, TIL117M All = 25 °C All ...

  • Page 3

    ... ECO Breakdown Voltage I Collector-Emitter Dark CEO Current I Collector-Base Dark CBO Current I CBO C Capacitance CE *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 16mA T = 25° 10mA for T = 0°C–70° ...

  • Page 4

    ... Operation) Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued 25°C unless otherwise specified.) A Test Conditions I = 10mA 10V 1mA MOC8100M F CE ...

  • Page 5

    ... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. Typ. ...

  • Page 6

    ... I F 0.4 0 0.2 0.1 0.0 10 100 R – BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ...

  • Page 7

    ... R – BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3 3.0 2.5 2.0 1.5 1.0 0 100 Fig. 10 Dark Current vs. Ambient Temperature vs ...

  • Page 8

    ... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...

  • Page 9

    ... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Order Entry Identifier (Example) ...

  • Page 10

    ... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø ...

  • Page 11

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...