MBR20200CTTU Fairchild Semiconductor, MBR20200CTTU Datasheet
MBR20200CTTU
Manufacturer Part Number
MBR20200CTTU
Description
DIODE SCHOTTKY DL 200V 10A TO220
Manufacturer
Fairchild Semiconductor
Specifications of MBR20200CTTU
Voltage - Forward (vf) (max) @ If
900mV @ 10A
Current - Reverse Leakage @ Vr
200µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR20200CTTU
Manufacturer:
FSC
Quantity:
9 182
Company:
Part Number:
MBR20200CTTU
Manufacturer:
FSC
Quantity:
1 000
© 2010 Fairchild Semiconductor Corporation
MBR20200CT Rev. A2
MBR20200CT
Dual High Voltage Schottky Rectifier
Features
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• RoHS Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant
• Wave Soldering or per MIL-STD-750 Method 2026.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics*
* DC Item are tested by Pulse Test : Pulse Width≤300
and can withstand to 260°C
Symbol
Symbol
Symbol
V
I
T
R
R
I
F(AV)
FSM
RRM
V
V
STG
T
I
θJC
θJA
R
R
J
F
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current, T
Peak Forward Surge Current, 8.3mS Half Sine wave
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case per Leg
Thermal Resistance, Junction to Ambient per Leg
Reverse Current
Forward Voltage
Parameter
T
a
Parameter
Parameter
T
= 25°C unless otherwise noted
a
= 25°C unless otherwise noted
T
a
V
V
I
I
I
I
= 25°C unless otherwise noted
F
F
F
F
R
R
= 10A
= 10A
= 20A
= 20A
= 200V
= 200V
Test Condition
μ
s, Duty Cycle≤2%
C
1
=115°C
T
T
T
T
T
T
C
C
C
C
C
C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Min.
20 (Per Device)
10 (Per Leg)
-55 to +150
1. Anode
3. Anode
Value
Max.
62.5
200
200
150
150
1.5
Mark : MBR20200CT
1 2 3
Max.
0.2
0.9
0.8
1.0
0.9
5
2. and Tab Cathode
November 2010
www.fairchildsemi.com
°C/W
°C/W
Unit
Unit
Unit
mA
°C
°C
V
V
A
A
V
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Datasheet:
MBR20200CTTU Summary of contents
Page 1
... MIL standard 883-1012 & JESD51-10 Electrical Characteristics* Symbol Parameter I Reverse Current R V Forward Voltage Item are tested by Pulse Test : Pulse Width≤300 © 2010 Fairchild Semiconductor Corporation MBR20200CT Rev 25°C unless otherwise noted a Parameter =115° 25°C unless otherwise noted a Parameter T = 25° ...
Page 2
... Forward Voltage Drop, V Figure 3.Junction Capacitance 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Reverse Voltage, V © 2010 Fairchild Semiconductor Corporation MBR20200CT Rev. A2 Figure 2. Reverse Leakage Current 1000 100 =125 = 0 = 0.01 1E-3 0.6 ...
Page 3
... Phisical Dimensions © 2010 Fairchild Semiconductor Corporation MBR20200CT Rev. A2 TO-220 [ DUAL GAUGE ] 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS Auto-SPM FRFET Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...