MMBD1205 Fairchild Semiconductor, MMBD1205 Datasheet
MMBD1205
Manufacturer Part Number
MMBD1205
Description
DIODE ULT FAST 100V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBD1205.pdf
(4 pages)
Specifications of MMBD1205
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
50nA @ 50V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Anode
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V @ 0.3 A
Recovery Time
4 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.05 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
200mA
Forward Voltage Vf Max
1.1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
2A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD1205
MMBD1205TR
MMBD1205TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD1205
Manufacturer:
Fairchild Semiconductor
Quantity:
51 000
Company:
Part Number:
MMBD1205
Manufacturer:
TOSHIBA
Quantity:
256
Part Number:
MMBD1205
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
Symbol
Symbol
Small Signal Diodes
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
SOT-23
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
1
MMBD1201 / 1203 / 1204 / 1205
2
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
MMBD1201 24
MMBD1204 27
Parameter
Parameter
T
A
= 25°C unless otherwise noted
1
MARKING
24
T
A
3
= 25°C unless otherwise noted
MMBD1203 26
MMBD1205 28
I
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
F
R
R
R
R
L
= 1.0 mA
= 10 mA
= 100 mA
= 200 mA
= 300 mA
= I
= 100 A
2
= 20 V
= 50 V
= 50 V, T
= 0, f = 1.0 MHz
= 100
Test Conditions
R
= 10 mA, I
A
= 150 C
RR
= 1.0 mA,
1201
1204
1
Connection Diagrams
1
3
3
-55 to +150
2
Min
0.87
2NC
100
550
660
820
Value
Value
-
100
200
150
350
357
1.0
2.0
Max
600
740
920
1.0
1.1
5.0
2.0
4.0
25
50
1
1
MMBD1200 series, Rev. C
3
3
Units
Units
Units
mW
mA
C/W
1203
2
1205
2
V
A
A
C
C
mV
mV
mV
nA
nA
pF
ns
V
V
V
A
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MMBD1205 Summary of contents
Page 1
... Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T Reverse Recovery Time t rr 2001 Fairchild Semiconductor Corporation MARKING MMBD1201 24 MMBD1203 26 MMBD1204 27 MMBD1205 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions I = 100 1 100 200 mA F ...
Page 2
Typical Characteristics 150 ° Ta 140 130 120 110 Reverse Current, I [uA] R Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA Ta ° 450 400 ...
Page 3
Typical Characteristics 4.0 ° Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - 500 400 300 200 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...