J309_Q Fairchild Semiconductor, J309_Q Datasheet

RF JFET NCh RF Transistor

J309_Q

Manufacturer Part Number
J309_Q
Description
RF JFET NCh RF Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of J309_Q

Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Continuous Drain Current
30 mA
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
• Sourced from Process 92.
• Source & Drain are interchangeable.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
operations.
Symbol
Symbol
T
R
R
V
V
J,
I
P
GF
θJC
θJA
DS
GS
T
D
stg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
D
J309
J310
T
a
= 25°C unless otherwise noted
Parameter
Parameter
T
TO-92
a
= 25°C unless otherwise noted
1
SOT-23
G
MMBFJ309
MMBFJ310
J309-J310 *MMBFJ309-310
D
625
127
357
5.0
- 55 to +150
Mark MMBFJ309 : 6U
S
Value
-25
25
10
MMBFJ310 : 6T
Max.
350
556
2.8
December 2010
www.fairchildsemi.com
Units
mA
°C
V
V
mW/°C
Units
°C/W
°C/W
mW

Related parts for J309_Q

J309_Q Summary of contents

Page 1

... P D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 MMBFJ309 J309 J310 MMBFJ310 G SOT-23 TO- 25°C unless otherwise noted ...

Page 2

... C Source-Gate Capacitance sg NF Noise Figure e Equivalent Short-Circuit Input n Noise Voltage * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev 25°C unless otherwise noted a Test Condition = -1.0μ -15V, V ...

Page 3

... Typical Performance Characteristics Transfer Characteristics Transfer Characteristics Input Admittance © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 Transfer Characteristics Transfer Characteristics Forward Transadmittance 3 www.fairchildsemi.com ...

Page 4

... Typical Performance Characteristics Common Drain-Source Output Admittance Noise Voltage vs. Frequency © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 (continued) Output Conductance vs. Drain Current Capacitance vs. Voltage Reverse Transadmittance 4 www.fairchildsemi.com ...

Page 5

... Typical Performance Characteristics Parameter Interactions © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 (continued) Leakage Current vs. Voltage Power Dissipation vs Ambient Temperature 700 600 TO-92 500 SOT-23 400 300 200 100 100 125 o TEMPERATURE ( C) 5 Transconductance vs. Drain Current 150 www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

Related keywords