MMBF4416_Q Fairchild Semiconductor, MMBF4416_Q Datasheet

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MMBF4416_Q

Manufacturer Part Number
MMBF4416_Q
Description
RF JFET NCh RF Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBF4416_Q

Configuration
Single
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
15 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MMBF4416 Rev. B2
© 2009 Fairchild Semiconductor Corporation
MMBF4416
N-Channel RF Amplifiers
• This device is designed for RF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings
Electrical Characteristics
V
V
I
T
Off Characteristics
V
I
V
V
On Characteristics
I
V
Small Signal Characteristics
lY
ly
C
C
C
Functional Characteristics
NF
G
Symbol
GF
GSS
DSS
J
DG
GS
(BR)GSS
GS
GS
GS
os
iss
rss
oss
ps
fs
, T
l
l
(off)
(f)
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate Source Cut-off Voltage
Gate Source Voltage
Zero-Gate Voltage Drain Current
Gate-Source Forward Voltage
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Noise Figure
Common Source Power Gain
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Junction and Storage Temperature Range
Parameter
T
A
=25°C unless otherwise noted
T
A
=25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DS
GS
GS
DS
DS
GS
DS
DS
DS
DS
DS
DS
DS
DS
Parameter
= 0, I
= 15V, I
= 15V, I
= 0, I
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, I
= 15V, I
= -20V, V
= -20V, V
= 15V, V
G
G
= 1μA
= 1mA
D
D
D
D
Test Condition
GS
GS
GS
GS
GS
GS
DS
DS
= 1nA
= 0.5mA
= 5mA, R
= 5mA, R
1
= 0
= 0, f = 1KHz
= 0, f = 1KHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0
= 0, T
A
g
g
= 150°C
= 100Ω, f = 100MHz
= 100Ω, f = 100MHz
Min.
4500
-2.5
-30
18
-1
5
-55 to +150
Value
-30
30
10
G
Typ.
D
Max. Units
7500
-200
-5.5
0.9
SOT-23
15
50
www.fairchildsemi.com
-1
-6
Mark: 6A
1
4
2
2
April 2009
Units
mA
°C
S
V
V
μmhos
μmhos
mA
nA
nA
P
P
P
dB
dB
V
V
V
V
F
F
F

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MMBF4416_Q Summary of contents

Page 1

... Output Admittance os C Input Capacitance iss C Reverse Transfer Capacitance rss C Output Capacitance oss Functional Characteristics NF Noise Figure G Common Source Power Gain ps © 2009 Fairchild Semiconductor Corporation MMBF4416 Rev =25°C unless otherwise noted A Parameter T =25°C unless otherwise noted A Test Condition 1μ -20V, V ...

Page 2

... Thermal Characteristics Symbol Total Device Dissipation P D Derate above 25°C R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. © 2009 Fairchild Semiconductor Corporation MMBF4416 Rev =25°C unless otherwise noted A Parameter 2 Max. Units 225 mW 1 ...

Page 3

... Mechanical Dimensions ±0.03 0.40 0.95 © 2009 Fairchild Semiconductor Corporation MMBF4416 Rev. B2 SOT-23 0.40 ±0.03 0.96~1.14 ±0.10 2.90 ±0.03 0.95 ±0.03 ±0.03 1.90 0.508REF 3 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...

Page 4

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM F-PFS FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS CROSSVOLT Green FPS CTL™ ...

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