2N5952_Q Fairchild Semiconductor, 2N5952_Q Datasheet
2N5952_Q
Manufacturer Part Number
2N5952_Q
Description
RF JFET NCh RF Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5952_Q.pdf
(3 pages)
Specifications of 2N5952_Q
Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Forward Transconductance Gfs (max / Min)
0.002 S
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
8 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications
• Sourced from process 50.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
On Characteristics
I
Small Signal Characteristics
g
g
C
C
NF
P
R
R
GF
GSS
DSS
Symbol
such as low on resistance analog switching.
fs
os
J
DG
GS
(BR)GSS
GS(off)
D
iss
rss
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transfer Conductance
Output Conductance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
300ms, Duty Cycle
Parameter
1.0%
T
A
T
Parameter
=25 C unless otherwise noted
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
V
V
V
V
V
V
V
V
V
f = 1.0kHz
2N5952
DS
GS
DS
DS
DS
DS
DS
DS
DS
= 0, I
= -15V, V
= 15V, I
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, R
Test Condition
G
= -1.0 A
D
GS
GS
GS
GS
GS
G
DS
= 100nA
= 1.0k ,
= 0
= 0, f = 1.0kHz
= 0, f = 100MHz
= 0, f = 1.0MHz
= 0, f = 1.0MHz
= 0
-55 ~ +150
1. Gate 2. Source 3. Drain
Value
1
-30
30
10
2000
Min.
-1.3
-30
4.0
Max.
Typ.
350
125
357
2.8
TO-92
6500
Max.
-1.0
-3.5
8.0
6.0
2.0
2.0
75
Rev. A1, November 2002
Units
mW/ C
mA
V
V
Units
C
mW
C/W
C/W
Units
mhos
mhos
mA
nA
pF
pF
dB
V
V
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2N5952_Q Summary of contents
Page 1
... Noise Figure * Pulse Test: Pulse Width 300ms, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation 2N5952 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition -1 ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, November 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...