BF244A_Q Fairchild Semiconductor, BF244A_Q Datasheet - Page 4

RF JFET N-Ch RF amplifier

BF244A_Q

Manufacturer Part Number
BF244A_Q
Description
RF JFET N-Ch RF amplifier
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BF244A_Q

Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
50 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Characteristics
Common Gate Characteristics
1
10
10
100
5
1
5
1
100
0
V
V
(CG)
GS
DS
Forward Transadmittance
+g
= 15V
= 0
Capacitance vs Voltage
b
fgs
V -- GATE-SOURCE VOLTAGE(V)
Og S
G S
Output Admittance
-5
200
(x 10)
f -- FREQUENCY (MHz)
200
f -- FREQUENCY (MHz )
-b
C
fgs
is
C
( V
300
rs
300
( V
DS
-10
DS
f = 0.1 - 1.0 MHz
= 15 V)
= 0 V)
g
V
V
(CG)
500
Ogs
500
GS
DS
(continued)
-15
= 0
= 15V
700
700
1000
1000
-20
5
4
3
2
1
0
10
1
100
10
5
1
100
R
I
V
T = +25 C
D
A
g
DS
V
V
(CG)
V
V
(CG)
GS
= 5.0 mA
= 1.0 k
DS
20
GS
DS
Reverse Transadmittance
= 15V
Noise Figure Frequency
= 15V
= 0
= 15V
= 0
O
30
- b
Input Admittance
g
200
f -- FREQUENCY (MHz)
f -- FREQUENCY (MHz)
200
rgs
f -- FREQUENCY (MHz)
N-Channel RF Amplifier
igs
50
b
igs
300
300
100
g
200 300
rgs
500
500
700
500
700
(continued)
1000
1000
1000
5

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