MMBD1403 Fairchild Semiconductor, MMBD1403 Datasheet
MMBD1403
Manufacturer Part Number
MMBD1403
Description
DIODE SS 200V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBD1404.pdf
(2 pages)
Specifications of MMBD1403
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 175V
Current - Average Rectified (io) (per Diode)
200mA
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Dual Series
Peak Rep Rev Volt
200V
Avg. Forward Curr (max)
0.2A
Rev Curr
0.1uA
Peak Non-repetitive Surge Current (max)
2A
Forward Voltage
1.1@3AV
Operating Temp Range
-55C to 150C
Package Type
SOT-23
Rev Recov Time
50ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Product
Ultra Fast Recovery Rectifier
Reverse Voltage
200 V
Forward Voltage Drop
1.1 V @ 3 A
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD1403TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD1403
Manufacturer:
FSC
Quantity:
15 000
Part Number:
MMBD1403-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
MMBD1403A
Manufacturer:
Fairchild Semiconductor
Quantity:
89 315
2002 Fairchild Semiconductor Corporation
Small Signal Diodes
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
SOT-23
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
1
MMBD1401 / 1403 / 1404 / 1405
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
2
Parameter
MMBD1401 29
MMBD1404 33
Parameter
Parameter
T
A
= 25°C unless otherwise noted
1
T
A
29
MARKING
= 25°C unless otherwise noted
3
I
I
I
I
I
V
V
V
I
R
R
F
F
F
F
F
MMBD1403 32
MMBD1405 34
R
R
R
L
= 10 mA
= 50 mA
= 200 mA
= 300 mA
= I
= 100 A
2
= 120 V
= 175 V
= 0, f = 1.0 MHz
= 100
Test Conditions
R
= 30 mA, I
RR
= 3.0 mA,
1401
1404
1
Connection Diagrams
1
3
-55 to +150
3
Min
200
760
2
Value
Value
2NC
200
200
150
350
357
1.0
2.0
Max
800
920
100
1.0
1.1
2.0
40
50
MMBD1400 series, Rev. C1
1
1
Units
Units
3
3
Units
mW
mA
C/W
V
A
A
C
C
mV
mV
1403
2
1405
nA
nA
pF
ns
2
V
V
V
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MMBD1403 Summary of contents
Page 1
... Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T Reverse Recovery Time t rr 2002 Fairchild Semiconductor Corporation MARKING MMBD1401 29 MMBD1403 32 MMBD1404 33 MMBD1405 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions I = 100 200 mA F ...
Page 2
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