BAT54SWT1G Fairchild Semiconductor, BAT54SWT1G Datasheet
BAT54SWT1G
Specifications of BAT54SWT1G
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BAT54SWT1G Summary of contents
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... V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2005 Fairchild Semiconductor Corporation BAT54SWT1G/BAT54CWT1G Rev MARKING BAT54SWT1G = YB BAT54CWT1G = 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 10µ 0.1mA 1mA 10mA ...
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... Typical Performance Characteristics Figure 1. Forward Voltage vs Temperature 0.1 125 ° C 0.01 100 C ° 1E-3 75 ° C 1E-4 25 ° C 1E-5 1E-6 0.2 0.4 Forward Voltage Drop, V Figure 3. Capacitance vs Reverse Bias Voltage BAT54SWT1G/BAT54CWT1G Rev. A Figure 2. Reverse Leakage Current 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 0.6 0 ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BAT54SWT1G/BAT54CWT1G Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...