MBR2545CT Fairchild Semiconductor, MBR2545CT Datasheet
MBR2545CT
Manufacturer Part Number
MBR2545CT
Description
DIODE SCHOTTKY 30A 45V TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR2560CT.pdf
(3 pages)
Specifications of MBR2545CT
Voltage - Forward (vf) (max) @ If
820mV @ 30A
Current - Reverse Leakage @ Vr
200µA @ 45V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
25 A @ Ta=130C
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.82 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR2545CT
Manufacturer:
SAMSUNG
Quantity:
4 500
Company:
Part Number:
MBR2545CT
Manufacturer:
VISHY
Quantity:
5 181
Part Number:
MBR2545CT
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBR2545CTG
Manufacturer:
ON/安森美
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
•
•
Schottky Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
Symbol
Electrical Characteristics
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
V
I
I
P
R
R
F(AV)
FSM
R
RRM
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
RRM
stg
J
F
D
JA
JL
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
PowerDissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Forward Voltage I
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
.375 " lead length @ T
2.0 us Pulse Width, f = 1.0 KHz
8.3 ms Single Half-Sine-Wave
MBR2535CT - MBR2560CT
I
I
I
F =
F =
F =
F =
Parameter
Parameter
Parameter
15 A, T
30 A, T
30 A, T
15 A, T
A
R
C
C
C
C
= 130 C
= 125 C
= 25 C
= 125 C
= 25 C
T
T
T
A
A
A
= 25°C unless otherwise noted
= 25 C
= 125 C
T
1
A
= 25°C unless otherwise noted
2
3
TO-220AB
2535CT
2535CT
35
0.82
0.73
0.2
1.0
40
-
-
2545CT
2545CT
45
-65 to +175
-65 to +150
Device
Value
Value
150
2.0
1.5
60
30
2550CT
2550CT
50
0.75
0.65
PIN 1
PIN 3
1.0
0.5
50
-
-
MBR2535CT - MBR2560CT, Rev. C
2560CT
2560CT
60
CASE
PIN 2
Units
Units
Units
+
C/W
C/W
mA
mA
W
V
A
A
V
V
V
V
A
C
C
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MBR2545CT Summary of contents
Page 1
... Electrical Characteristics Symbol Parameter V Forward Voltage Reverse Current @ rated Peak Repetitive Reverse Surge Current RRM 2.0 us Pulse Width 1.0 KHz 2001 Fairchild Semiconductor Corporation TO-220AB T = 25°C unless otherwise noted A 2535CT 2545CT 35 = 130 25°C unless otherwise noted A 2535CT 2545CT - = 125 C C 0.82 ...
Page 2
... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz MBR2535CT-MBR2545CT º 125 C A MBR2550CT-MBR2560CT º MBR2535CT-MBR2545CT º MBR2550CT-MBR2560CT 100 120 140 0 100 Pulse Duration [s] MBR2535CT - MBR2560CT, Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...