MBR3060PT Fairchild Semiconductor, MBR3060PT Datasheet
MBR3060PT
Manufacturer Part Number
MBR3060PT
Description
DIODE SCHOTTKY 30A 60V TO-247 AD
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR3060PT.pdf
(3 pages)
Specifications of MBR3060PT
Voltage - Forward (vf) (max) @ If
750mV @ 20A
Current - Reverse Leakage @ Vr
5mA @ 60V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
30 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.75 V @ 20 A
Maximum Reverse Leakage Current
5000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR3060PTFS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR3060PT
Manufacturer:
PANJIT
Quantity:
5 000
Company:
Part Number:
MBR3060PT
Manufacturer:
PANJIT
Quantity:
25 000
Part Number:
MBR3060PT
Manufacturer:
PANJIT/ 强茂
Quantity:
20 000
Company:
Part Number:
MBR3060PT-E3/45
Manufacturer:
VISHAY
Quantity:
808
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
•
•
Schottky Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
V
I
I
F(AV)
FSM
P
R
R
RRM
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
stg
J
RRM
F
D
JL
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage I
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
Power Dissipation
Thermal Resistance, Junction to Lead
2.0 us Pulsu Width, f = 1.0 KHz
8.3 ms Single Half-Sine-Wave
MBR3035PT - MBR3060PT
I
I
I
F =
F =
F =
F =
Parameter
Parameter
Parameter
20 A, T
30 A, T
30 A, T
20 A, T
R
C
C
C
C
= 125 C
= 25 C
= 125 C
= 25 C
T
T
T
A
A
A
= 125 C
= 25 C
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
TO-3P/TO-247AD
1 2 3
3035PT
3035PT
35
0.60
0.76
0.72
1.0
1.0
60
-
3045PT
3045PT
45
-65 to +175
-65 to +150
Device
Value
Value
200
30
3.0
1.4
3050PT
3050PT
50
PIN 1
PIN 3
0.75
0.65
100
5.0
0.5
-
-
MBR3035PT - MBR3060PT, Rev. C
3060PT
3060PT
60
CASE
PIN 2
+
Units
Units
Units
mA
mA
C/W
W
V
A
A
V
V
V
V
A
C
C
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MBR3060PT Summary of contents
Page 1
... C C 0.60 = 125 0.72 = 125 125 C A 1.0 PIN 1 + CASE PIN 3 PIN 2 Value Units 3050PT 3060PT 200 A -65 to +175 C -65 to +150 C Value Units 3.0 W 1.4 C/W Device Units 3050PT 3060PT 0. 5.0 mA 100 mA 0.5 A MBR3035PT - MBR3060PT, Rev. C ...
Page 2
... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz MBR3035PT-MBR3045PT º 125 C A MBR3050PT-MBR3060PT º MBR3035PT-MBR3045PT º MBR3050PT-MBR3060PT 100 120 140 0 100 Pulse Duration [s] MBR3035PT - MBR3060PT, Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...