MBR3060PT

Manufacturer Part NumberMBR3060PT
DescriptionDIODE SCHOTTKY 30A 60V TO-247 AD
ManufacturerFairchild Semiconductor
MBR3060PT datasheets

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Specifications of MBR3060PT

Voltage - Forward (vf) (max) @ If750mV @ 20ACurrent - Reverse Leakage @ Vr5mA @ 60V
Current - Average Rectified (io) (per Diode)30AVoltage - Dc Reverse (vr) (max)60V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Diode Configuration1 Pair Common CathodeMounting TypeThrough Hole, Radial
Package / CaseTO-247-3ProductSchottky Diodes
Peak Reverse Voltage60 VForward Continuous Current30 A
Max Surge Current200 AConfigurationDual Common Cathode
Forward Voltage Drop0.75 V @ 20 AMaximum Reverse Leakage Current5000 uA
Operating Temperature Range- 65 C to + 150 CMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS CompliantReverse Recovery Time (trr)-
Other namesMBR3060PTFS  
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MBR3035PT - MBR3060PT
Features
•
Low power loss, high efficiency.
•
High surge capacity.
•
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
•
Metal silicon junction, majority carrier
conduction.
•
High current capacity, low forward
voltage drop.
•
Guard ring for over voltage protection.
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
Parameter
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
T
stg
T
Operating Junction Temperature
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
P
Power Dissipation
D
Thermal Resistance, Junction to Lead
R
JL
Electrical Characteristics
Symbol
Parameter
V
Forward Voltage I
20 A, T
F
F =
I
20 A, T
F =
I
30 A, T
F =
I
30 A, T
F =
I
Reverse Current @ rated V
R
I
Peak Repetitive Reverse Surge Current
RRM
2.0 us Pulsu Width, f = 1.0 KHz
2001 Fairchild Semiconductor Corporation
1 2 3
TO-3P/TO-247AD
T
= 25°C unless otherwise noted
A
3035PT
3045PT
35
T
= 25°C unless otherwise noted
A
3035PT
3045PT
-
= 25 C
C
0.60
= 125 C
C
0.76
= 25 C
C
0.72
= 125 C
C
1.0
T
= 25 C
R
A
60
T
= 125 C
A
1.0
PIN 1
+
CASE
PIN 3
PIN 2
Value
Units
3050PT
3060PT
45
50
60
V
30
A
200
A
-65 to +175
C
-65 to +150
C
Value
Units
3.0
W
1.4
C/W
Device
Units
3050PT
3060PT
0.75
V
0.65
V
-
V
-
V
5.0
mA
100
mA
0.5
A
MBR3035PT - MBR3060PT, Rev. C

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MBR3060PT Summary of contents

  • Page 1

    ... C C 0.60 = 125 0.72 = 125 125 C A 1.0 PIN 1 + CASE PIN 3 PIN 2 Value Units 3050PT 3060PT 200 A -65 to +175 C -65 to +150 C Value Units 3.0 W 1.4 C/W Device Units 3050PT 3060PT 0. 5.0 mA 100 mA 0.5 A MBR3035PT - MBR3060PT, Rev. C ...

  • Page 2

    ... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz MBR3035PT-MBR3045PT º 125 C A MBR3050PT-MBR3060PT º MBR3035PT-MBR3045PT º MBR3050PT-MBR3060PT 100 120 140 0 100 Pulse Duration [s] MBR3035PT - MBR3060PT, Rev. C ...

  • Page 3

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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