FFA40U60DNTU Fairchild Semiconductor, FFA40U60DNTU Datasheet

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FFA40U60DNTU

Manufacturer Part Number
FFA40U60DNTU
Description
DIODE ULTRA FAST 600V 40A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FFA40U60DNTU

Voltage - Forward (vf) (max) @ If
2.1V @ 40A
Current - Reverse Leakage @ Vr
20µA @ 600V
Current - Average Rectified (io) (per Diode)
40A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
110ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FFA40U60DNTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FFA40U60DNTU
Manufacturer:
IXYS
Quantity:
5 000
©2000 Fairchild Semiconductor International
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switching mode power supply
• Free-wheeling diode for motor application
• Power switching circuits
V
I
I
T
R
V
I
t
I
Q
W
F(AV)
FSM
RM
rr
rr
J,
RRM
FM
rr
AVL
JC
Symbol
Symbol
Symbol
T
STG
*
*
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
Avalanche Energy
F
=40A, di/dt = 200A/ s)
60Hz Single Half-Sine Wave
I
I
@ rated V
F
F
= 40A
= 40A
Parameter
(per diode) T
Parameter
Parameter
(per diode) T
R
FFA40U60DN
1
C
2
=25 C unless otherwise noted
3
C
=25 C unless otherwise noted
T
T
T
T
@ T
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
C
= 100 C
TO-3P
Min.
1.0
-
-
-
-
-
-
-
1. Anode 2.Cathode 3. Anode
- 65 to +150
Typ.
-
-
-
-
-
-
-
-
Value
Value
600
240
0.7
40
Max
200
550
110
2.1
1.9
20
10
-
Rev. F, September 2000
Units
Units
Units
C/W
mJ
nC
ns
V
A
A
V
A
C
A

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FFA40U60DNTU Summary of contents

Page 1

... I Maximum Reverse Recovery Current rr Q Maximum Reverse Recovery Charge rr (I =40A, di/dt = 200A Avalanche Energy AVL * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FFA40U60DN TO- (per diode) T =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave ...

Page 2

... Figure 1. Typical Forward Voltage Drop vs. Forward Current 400 300 200 100 0.1 1 Reverse Voltage , V Figure 3. Typical Junction Capacitance 100 di/dt [A/ s] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International 1000 100 0.1 0.01 1E-3 2.0 2.5 3.0 [V] F 100 Typical Capacitance 403 100 10 ...

Page 3

... Package Dimensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. F, September 2000 ...

Page 4

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...

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