ISL9K30120G3 Fairchild Semiconductor, ISL9K30120G3 Datasheet

ISL9K30120G3

Manufacturer Part Number

ISL9K30120G3

Description

DIODE DUAL 1200V 30A TO-247

Manufacturer

Fairchild Semiconductor

Series

Stealth™r

Datasheet

1.ISL9K30120G3.pdf (6 pages)

Specifications of ISL9K30120G3

Voltage - Forward (vf) (max) @ If

3.3V @ 30A

Current - Reverse Leakage @ Vr

100µA @ 1200V

Current - Average Rectified (io) (per Diode)

30A

Voltage - Dc Reverse (vr) (max)

1200V (1.2kV)

Reverse Recovery Time (trr)

100ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole, Radial

Package / Case

TO-247-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ISL9K30120G3

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 6
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ISL9K30120G3

30A, 1200V Stealth™ Dual Diode

General Description

The ISL9K30120G3 is a Stealth™ dual diode optimized for low

loss performance in high frequency hard switched applications.

The Stealth™ family exhibits low reverse recovery current

operating conditions.

This device is intended for use as a free wheeling or boost

diode in power supplies and other power switching

applications. The low I

in switching transistors. The soft recovery minimizes ringing,

expanding the range of conditions under which the diode may

be operated without the use of additional snubber circuitry.

Consider using the Stealth™ diode with a 1200V NPT IGBT to

provide the most efficient and highest power density design at

lower cost.

Formerly developmental type TA49415

Device Maximum Ratings (

Package

RM(REC)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

Symbol

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

F(AV)

, T

FRM

RWM

FSM

RRM

PKG

AVL

) and exceptionally soft recovery under typical

STG

(BOTTOM SIDE

CATHODE

METAL)

Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current (T

Total Device Current (Both Legs)

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

Avalanche Energy (1A, 40mH)

Operating and Storage Temperature Range

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Application Note AN-7528

JEDEC STYLE TO-247

RM(REC)

and short t

phase reduce loss

per leg)

ANODE 2

Parameter

CATHODE

ANODE 1

= 80

= 25°C unless otherwise noted

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t

• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t

• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

•

Snubber Diode

-55 to 150

Ratings

Symbol

1200

325

166

300

260

May 2002

ISL9K30120G3 Rev. A

/ t

Units

< 56ns

°C

> 4.5

Related parts for ISL9K30120G3

ISL9K30120G3 Summary of contents

Page 1

... ISL9K30120G3 30A, 1200V Stealth™ Dual Diode General Description The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical RM(REC) operating conditions ...

Page 2

... C b TO-247 Tape Width Quantity N/A 30 Min Typ Max T = 25° 100 125° 1 25°C - 2.8 3 125°C - 2.6 3 115 - = 15V - 15V - 80 100 R - 269 - - 7 930 - - 529 - - 6 3 260 - - 4 3 520 - - - 0. ISL9K30120G3 Rev. A Units µ µ µC A/µs °C/W °C/W ...

Page 3

... 60A, 30A, 15A 60A, 30A, 15A a F 400 600 800 1000 dI /dt, CURRENT RATE OF CHANGE (A/µs) F and t Curves 780V 125 30A 15A F 400 600 800 1000 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9K30120G3 Rev. A 1.1 1.2 1200 = 60A 1200 ...

Page 4

... 60A 30A 15A F 400 600 800 1000 dI /dt, CURRENT RATE OF CHANGE (A/µ 30A 780V, dI /dt = 500A/µ RM(REC 100 125 CASE TEMPERATURE ( C) C and t vs Case Temperature rr 130 140 150 C) ISL9K30120G3 Rev. A 1200 /dt F 400 350 300 250 200 150 ...

Page 5

... DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation (Continued RECTANGULAR PULSE DURATION ( CURRENT 0 SENSE + Figure 14 Figure 16. Avalanche Current and Voltage NOTES: DUTY FACTOR PEAK 0. Waveforms and Definitions rr V AVL Waveforms ISL9K30120G3 Rev. A ...

Page 6

CROSSVOLT â â â â Rev. H5 ...

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