BAW76 Fairchild Semiconductor, BAW76 Datasheet

DIODE HI COND 75V 300MA DO-35

BAW76

Manufacturer Part Number
BAW76
Description
DIODE HI COND 75V 300MA DO-35
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BAW76

Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
300mA
Current - Reverse Leakage @ Vr
100nA @ 50V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
75 V
Forward Voltage Drop
1 V @ 0.1 A
Recovery Time
4 ns
Forward Continuous Current
0.3 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2004 Fairchild Semiconductor Corporation
BAW76 Rev. A
BAW76
Small Signal Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
Symbol
Symbol
Symbol
T
JA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
I
I
V
V
V
I
R
I
R
R
F
F
F
Color Band Denotes Cathode
R
R
R
L
L
= 100mA
= 10mA, V
= I
= 5 A
= 100 , I
= 100
= 50V
= 50V, T
= 0, f = 1.0MHz
R
= 10mA, I
DO-35
1
Conditions
A
rr
R
= 150 C
= 1mA
= 6.0V
rr
= 1.0mA,
-65 to +200
Value
Value
300
175
500
300
1.0
4.0
75
Min.
75
Max
100
100
1.0
2
2
4
December 2004
www.fairchildsemi.com
Unit
Unit
mW
mA
C/W
V
A
A
C
C
Units
nA
pF
ns
ns
V
V
A

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BAW76 Summary of contents

Page 1

... Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2004 Fairchild Semiconductor Corporation BAW76 Rev. A DO-35 Color Band Denotes Cathode T = 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions 100mA ...

Page 2

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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