1N4150_T50A Fairchild Semiconductor, 1N4150_T50A Datasheet - Page 2

• Manufacturer Part Number: 1N4150_T50A
• Description: DIODE 50V 200MA DO35
• Manufacturer: Fairchild Semiconductor

Specifications of 1N4150_T50A

• Voltage - Forward (vf) (max) @ If: 1V @ 200mA
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 200mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 75 V
• Forward Voltage Drop: 1 V
• Recovery Time: 6 ns
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.1 uA at 50 V
• Power Dissipation: 0.5 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

B
I
V
C
T
T
Symbol
R
RR
FR
V
F
O
Electrical Characteristics
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Forward Recovery Time
Parameter
TA = 25°C unless otherwise noted
I
V
V
I
I
I
I
I
V
I
I
I
R
F
F
F
F
F
F
F
F
R
R
R
= 1.0 mA
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= I
= I
= 200 mA, V
= 5.0 A
= 50 V
= 50 V, T
= 0, f = 1.0 MHz
R
R
= 10 mA-200 mA, R
=200 mA-400 mA,R
Test Conditions
High Conductance Ultra Fast Diode
A
= 150 C
FR
= 1.0 V
L
L
= 100
= 100
Min
0.87
540
660
760
820
75
Max
100
100
620
740
860
920
1.0
2.5
4.0
6.0
10
(continued)
Units
mV
mV
mV
mV
nA
nS
nS
nS
pF
V
V
A