BAS21_ND87Z Fairchild Semiconductor, BAS21_ND87Z Datasheet
BAS21_ND87Z
Specifications of BAS21_ND87Z
Related parts for BAS21_ND87Z
BAS21_ND87Z Summary of contents
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... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA ã 2002 Fairchild Semiconductor Corporation BAS21 3 A82 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted CONNECTION DIAGRAM ...
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Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Voltage Leakage Current R V Forward Voltage F C Diode Capacitance O T Reverse Recovery Time RR General Purpose High Voltage Diode TA = 25°C unless otherwise noted Test Conditions ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...