DIODE GPP FAST 1A 400V DO-41

RGP10G

Manufacturer Part NumberRGP10G
DescriptionDIODE GPP FAST 1A 400V DO-41
ManufacturerFairchild Semiconductor
RGP10G datasheet
Product Change Notification
 

Specifications of RGP10G

Voltage - Forward (vf) (max) @ If1.3V @ 1AVoltage - Dc Reverse (vr) (max)400V
Current - Average Rectified (io)1ACurrent - Reverse Leakage @ Vr5µA @ 400V
Diode TypeStandardSpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150nsCapacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeThrough HolePackage / CaseDO-204AL, DO-41, Axial
ProductFast Recovery RectifierConfigurationSingle
Reverse Voltage400 VForward Voltage Drop1.3 V
Recovery Time150 nsForward Continuous Current1 A
Max Surge Current30 AReverse Current Ir5 uA
Power Dissipation3 WMounting StyleThrough Hole
Maximum Operating Temperature+ 175 CMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
Page 1/3

Download datasheet (47Kb)Embed
Next
Features
1.0 ampere operation at T
= 55°C
A
with no thermal runaway.
High temperature metallurgically
bonded construction.
Glass passivated cavity-free junction.
Typical I
less than 1 A.
R
Fast switching for high efficiency.
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
Parameter
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current,
F(AV)
.375 " lead length @ T
I
Non-repetitive Peak Forward Surge Current
FSM
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
T
stg
T
Operating Junction Temperature
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
P
Power Dissipation
D
Thermal Resistance, Junction to Ambient
R
JA
Electrical Characteristics
Symbol
Parameter
V
Forward Voltage @ 1.0 A
F
t
Reverse Recovery Time
rr
I
= 0.5 A, I
= 1.0 A, I
F
R
I
Reverse Current @ rated V
R
C
Total Capacitance
T
V
= 4.0 V, f = 1.0 MHz
R
2001 Fairchild Semiconductor Corporation
RGP10A - RGP10M
COLOR BAND DENOTES CATHODE
T
= 25°C unless otherwise noted
A
10A
10B
10D
50
100
200
= 55 C
L
T
= 25°C unless otherwise noted
A
10A
10B
10D
150
= 0.25 A
rr
T
= 25 C
R
A
T
= 150 C
A
DO-41
Value
Units
10G
10J
10K
10M
400
600
800
1000
V
1.0
A
30
A
-65 to +175
C
-65 to +175
C
Value
Units
3.0
W
50
C/W
Device
Units
10G
10J
10K
10M
1.3
V
250
500
ns
5.0
A
200
A
15
pF
RPG10A - RPG10M, Rev. C

RGP10G Summary of contents

  • Page 1

    ... V Forward Voltage @ 1 Reverse Recovery Time 0 1 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation RGP10A - RGP10M COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted A 10A 10B 10D 50 100 200 = 25°C unless otherwise noted A 10A 10B 10D 150 = 0 ...

  • Page 2

    ... Forward Voltage, V Figure 3. Forward Voltage Characteristics 50 50 NONINDUCTIVE NONINDUCTIVE DUT 50V (approx) 50 OSCILLOSCOPE NONINDUCTIVE (Note 1) Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 125 150 175 1 Figure 2. Non-Repetitive Surge Current 10 1 0.1 0.01 1.2 1 ...

  • Page 3

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...