ES1A Fairchild Semiconductor, ES1A Datasheet
ES1A
Manufacturer Part Number
ES1A
Description
DIODE FAST 1A 50V SMA
Manufacturer
Fairchild Semiconductor
Datasheet
1.ES1D.pdf
(4 pages)
Specifications of ES1A
Voltage - Forward (vf) (max) @ If
920mV @ 1A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 50V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
15ns
Capacitance @ Vr, F
7pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
0.92 V
Recovery Time
15 ns
Forward Continuous Current
1 A @ Ta=120C
Max Surge Current
30 A
Reverse Current Ir
5 uA
Power Dissipation
1.47 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ES1A
Manufacturer:
TAIWANSE
Quantity:
7 500
Part Number:
ES1A
Manufacturer:
TSC/台半
Quantity:
20 000
Company:
Part Number:
ES1A-13-F
Manufacturer:
DIODES
Quantity:
20 000
Part Number:
ES1A-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
ES1A-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
ES1A-E3/5AT
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
ES1A-E3/61T
Manufacturer:
VISHAY
Quantity:
130 000
Part Number:
ES1A-ES1J
Manufacturer:
JXND
Quantity:
20 000
Company:
Part Number:
ES1A/11
Manufacturer:
VISHAY
Quantity:
54 000
2010 Fairchild Semiconductor Corporation
Fast Rectifiers
Absolute Maximum Ratings*
*
*
Electrical Characteristics
Thermal Characteristics
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 0.013 mm.
Symbol
V
t
I
C
rr
R
P
R
R
Features
•
•
•
•
•
•
F
T
V
I
I
T
T
F(AV)
FSM
D
stg
J
RRM
JA
JL
Glass passivated junction.
Low profile package.
Easy pick and place.
Superfast recovery times for
high efficiency.
Built-in strain relief.
For surface mount applications.
Forward Voltage @ 1.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
I
V
F
R
= 0.5 A, I
= 4.0 V, f = 1.0 MHz
8.3 ms Single Half-Sine-Wave
R
= 1.0 A, I
Parameter
Parameter
Parameter
RR
= 0.25 A
ES1A - ES1D
R
T
A
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
T
T
A
A
A
= 25 C
= 100 C
=120°C
COLOR BAND DENOTES CATHODE
1A
50
SMA/DO-214AC
1A
100
1B
-50 to +150
-50 to +150
1B
Device
Value
Value
0.92
100
1.47
5.0
7.0
1.0
15
30
85
35
150
1C
1C
200
1D
1D
Units
Units
Units
ES1A-ES1D, Rev. C1
pF
V
A
A
C/W
C/W
ns
C
C
V
W
A
A
Related parts for ES1A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Es1a - Es1d Fast Rectifiers
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
ES1A Summary of contents
Page 1
... ES1A - ES1D SMA/DO-214AC COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100 =120° 25°C unless otherwise noted 0. 100 C A Value Units 150 200 V 1 -50 to +150 C -50 to +150 C Value Units 1. C/W 35 C/W Device Units 0. 5.0 A 100 A 7.0 pF ES1A-ES1D, Rev. C1 ...
Page 2
... OSCILLOSCOPE (Note 1) -1.0A º Pulse Width = 300 s 2% Duty Cycle 0.6 0.8 1 1.2 1.4 Forward Voltage, V [V] F º 125 C A º º 100 120 140 Percent of Rated Peak Reverse Voltage [%] 100 trr 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm ES1A-ES1D, Rev. C1 ...
Page 3
... Package Dimensions 2010 Fairchild Semiconductor Corporation SMA / DO - 214AC Dimensions in Millimeters ES1A-ES1D, Rev. C1 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...