EGP10D Fairchild Semiconductor, EGP10D Datasheet - Page 102

• Manufacturer Part Number: EGP10D
• Description: DIODE FAST GPP 1A 200V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of EGP10D

• Voltage - Forward (vf) (max) @ If: 950mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

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Small Signal Transistors – Digital Transistors (Continued)
FJNS3213R
FJNS3214R
FJNS3215R
TO-92S PNP Configuration
FJNS3211R
FJNS4209R
FJNS4210R
FJNS4211R
FJNS4212R
FJNS4201R
FJNS4202R
FJNS4203R
FJNS4204R
FJNS4205R
FJNS4206R
FJNS4207R
FJNS4208R
FJNS4213R
FJNS4214R
Products
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CEO
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
R
22
10
22
47
10
22
47
10
22
47
1
(KΩ)
4.7
R
47
47
10
10
22
47
10
47
47
22
47
47
–
–
–
–
–
2
Min
100
100
100
100
100
68
68
33
20
30
56
68
30
68
68
56
68
68
2-97
Discrete Power Products –
Max
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
(mA)