EGP10B Fairchild Semiconductor, EGP10B Datasheet - Page 8

• Manufacturer Part Number: EGP10B
• Description: DIODE FAST GPP 1A 100V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of EGP10B

• Voltage - Forward (vf) (max) @ If: 950mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

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BGA
1.5x1.5 mm
FDZ298N
2.0x2.0 mm
FDZ203N
2.0x2.5 mm
FDZ201N
FDZ209N
2.5x4.0 mm
FDZ2553N
FDZ2553NZ
FDZ2551N
3.5x4.0 mm
FDZ7064N
FDZ7064S
5.0x5.5 mm
FDZ5047N
1.5x1.5 mm
FDZ299P
2.0x2.0 mm
FDZ204P
2.0x2.5 mm
FDZ202P
2.5x4.0 mm
FDZ2554P
FFDZ2554PZ
FDZ2552P
3.5x4.0 mm
FDZ208P
FDZ206P
BGA N-Channel
BGA P-Channel
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-30
-20
20
20
20
60
20
20
20
30
30
30
DSS
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Drain
Drain
Drain
Drain
Drain
Drain
0.0029
0.0105
0.007
0.007
10V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.08@5V
0.0045
0.0165
0.0095
0.027
0.018
0.018
0.014
0.014
0.018
0.008
0.009
0.055
0.045
0.045
0.028
0.028
0.045
4.5V
Max (Ω) @ V
2-3
0.0145
2.5V
0.039
0.075
0.075
0.045
0.045
0.075
0.03
0.03
0.02
0.02
0.03
0.08
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.6
11
11
12
13
11
31
25
52
14
15
25
38
7
9
9
9
= 5V
I
D
13.5
13.5
12.5
7.5
9.6
9.6
4.6
4.5
5.5
6.5
6.5
5.5
22
13
6
9
4
9
(A)
MOSFETs
P
D
1.7
1.6
2.1
2.1
2.1
2.2
2.2
2.8
1.7
1.8
2.1
2.1
2.1
2.2
2.2
2
2
2
(W)