S2A Fairchild Semiconductor, S2A Datasheet

DIODE GPP GEN PURP 2A 50V SMB

S2A

Manufacturer Part Number
S2A
Description
DIODE GPP GEN PURP 2A 50V SMB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of S2A

Voltage - Forward (vf) (max) @ If
1.15V @ 2A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1µA @ 50V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Capacitance @ Vr, F
30pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
1.15 V
Recovery Time
2000 ns
Forward Continuous Current
2 A @ Ta=100C
Max Surge Current
50 A
Reverse Current Ir
1 uA
Power Dissipation
2.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Rectifier Type
Switching Diode
Peak Rep Rev Volt
50V
Avg. Forward Curr (max)
2A
Rev Curr
1uA
Peak Non-repetitive Surge Current (max)
50A
Forward Voltage
1.15V
Operating Temp Range
-65C to 150C
Package Type
DO-214AA
Rev Recov Time
2000ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
V
I
I
T
T
V
t
I
C
F(AV)
FSM
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
Device mounted on FR-4 PCB 0.013 mm.
rr
R
Features
stg
J
RRM
F
T
D
JA
Easy pick and place.
High Current Capability.
High Surge Current Capability.
Low forward Voltage Drop.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage @ 2.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient*
I
V
F
R
= 0.5 A, I
8.3 ms Single Half-Sine-Wave
= 4.0 V, f = 1.0 MHz
R
= 1.0 A, I
Parameter
Parameter
Parameter
rr
R
= 0.25 A
T
S2A - S2M
A
= 25°C unless otherwise noted
T
T
T
A
A
A
A
= 25°C unless otherwise noted
= 25 C
= 125 C
= 100°C
2A
2A
50
COLOR BAND DENOTES CATHODE
SMB/DO-214AA
100
2B
2B
200
2D
2D
-65 to +150
-65 to +150
Device
Value
Value
400
1.15
2G
2G
2.35
125
2.0
2.0
1.0
50
30
53
600
2J
2J
800
2K
2K
1000
2M
2M
S2A-S2M, Rev. C
Units
Units
Units
C/W
pF
V
A
A
W
V
C
C
A
A
s

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S2A Summary of contents

Page 1

... COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100 = 100° 25°C unless otherwise noted 0. 125 C A Value Units 200 400 600 800 1000 V 2 -65 to +150 C -65 to +150 C Value Units 2. C/W Device Units 1.15 V 2.0 s 1.0 A 125 S2A-S2M, Rev. C ...

Page 2

... Percent of Rated Peak Reverse Voltage [%] [V] F Figure 4. Reverse Current vs Reverse Voltage 0.1 0.2 0 Reverse Voltage, V [V] R Figure 5. Total Capacitance (continued 100 Number of Cycles at 60Hz º 125 C A º 100 C A º 100 120 140 50 100 S2A-S2M, Rev. C ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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