SS14 Fairchild Semiconductor, SS14 Datasheet
SS14
Manufacturer Part Number
SS14
Description
DIODE SCHOTTKY 1A 40V SMA
Manufacturer
Fairchild Semiconductor
Datasheet
1.SS12.pdf
(3 pages)
Specifications of SS14
Voltage - Forward (vf) (max) @ If
500mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
200µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A @ Ta=75C
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SS14TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SS14
Manufacturer:
PANJIT
Quantity:
4 903
Part Number:
SS14
Manufacturer:
TSC/台半
Quantity:
20 000
Company:
Part Number:
SS14 R3
Manufacturer:
MPS
Quantity:
5 123
Company:
Part Number:
SS14(SMA)
Manufacturer:
WILLAS
Quantity:
3 771
Part Number:
SS14-AU
Manufacturer:
PANJIT/强茂
Quantity:
20 000
Part Number:
SS14-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SS14-E3/5AT
Manufacturer:
VIHSAY
Quantity:
20 000
Part Number:
SS14-E3/61
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SS14-E3/61T
Manufacturer:
VISHAY
Quantity:
5 400
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
Schottky Rectifiers
V
I
I
T
T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
Device mounted on FR-4 PCB 0.013 mm.
V
I
Features
•
•
•
F(AV)
FSM
R
stg
J
RRM
D
F
JA
Glass passivated junctions.
High current capability, low V
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient *
Forward Voltage @ 1.0 A
Reverse Current @ rated V
8.3 ms Single Half-Sine-Wave
.375 " lead length @ T
Parameter
Parameter
Parameter
F
.
R
A
= 75 C
T
T
SS12 - S100
A
T
A
A
= 100 C
= 25 C
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
COLOR BAND DENOTES CATHODE
12
20
12
SMA/DO-214AC
500
13
30
13
14
40
14
-65 to +150
-65 to +125
Device
15
50
15
Value
Value
700
1.0
1.1
0.2
40
88
10
16
60
16
18
18
80
850
19
90
19
100
100
100
SS12-S100, Rev. C
Units
Units
Units
C/W
mV
mA
mA
W
V
A
A
C
C
Related parts for SS14
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SS14 Summary of contents
Page 1
... Power Dissipation D Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Parameter V Forward Voltage @ 1 Reverse Current @ rated V R 2001 Fairchild Semiconductor Corporation SS12 - S100 . F SMA/DO-214AC COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 25°C unless otherwise noted ...
Page 2
... Lead Temperature [ºC] Figure 1. Forward Current Derating Curve 30 25 8.3ms Single Half-Sine-Wave 20 JEDEC Method Number of Cycles at 60Hz Figure 3. Non-Repetitive Surge Current 20 SS12 - SS14 120 140 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage [V] Figure 2. Forward Voltage Characteristics 400 200 100 100 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...