MBR745 Fairchild Semiconductor, MBR745 Datasheet
MBR745
Manufacturer Part Number
MBR745
Description
DIODE SCHOTTKY 7.5A 45V TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR750.pdf
(3 pages)
Specifications of MBR745
Voltage - Forward (vf) (max) @ If
840mV @ 15A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
7.5A
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
7.5 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.84 V @ 15 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR745
Manufacturer:
DIODES
Quantity:
10 000
Part Number:
MBR745
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR745-E3/45
Manufacturer:
TSC
Quantity:
30 000
Company:
Part Number:
MBR745CT
Manufacturer:
VISHAY
Quantity:
2 000
Part Number:
MBR745G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBR745PBF
Manufacturer:
IR
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
•
•
Symbol
*
Thermal Characteristics
Electrical Characteristics
Symbol
Absolute Maximum Ratings*
Symbol
V
I
I
T
T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
Schottky Rectifiers
F(AV)
FSM
R
RRM
P
R
R
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
stg
J
RRM
F
protection applications.
D
JA
JL
Maximum Repetitive Reverse Voltage
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage I
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
2.0 us Pulse Width, f = 1.0 KHz
Average Rectified Forward Current
8.3 ms Single Half-Sine-Wave
Parameter
Parameter
Parameter
I
I
I
F =
F =
F =
F =
7.5 A, T
15 A, T
15 A, T
7.5 A, T
MBR735 - MBR760
R
C
C
C
C
= 25 C
= 125 C
= 125 C
T
T
= 25 C
A
A
T
A
= 25 C
= 125 C
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
TO-220AC
1
2
735
735
35
0.57
0.84
0.72
0.1
1.0
15
-
745
745
45
-65 to +175
-65 to +150
Device
Value
Value
2.0
3.0
150
60
7.5
PIN 1 +
PIN 2 -
750
750
50
CASE Positive
inches (mm)
Dimensions
0.75
0.65
0.5
0.5
50
are in:
-
760
760
60
CASE
MBR735 - MBR760, Rev. C
+
-
Units
Units
Units
C/W
C/W
mA
mA
W
V
A
A
V
V
V
V
A
C
C
Related parts for MBR745
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MBR745 Summary of contents
Page 1
... Symbol Parameter V Forward Voltage Reverse Current @ rated Peak Repetitive Reverse Surge Current RRM 2.0 us Pulse Width 1.0 KHz 2001 Fairchild Semiconductor Corporation MBR735 - MBR760 1 2 TO-220AC T = 25°C unless otherwise noted A 735 25°C unless otherwise noted A 735 - = 0.57 = 125 ...
Page 2
... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz º 125 C A MBR735-MBR745 º MBR750-MBR760 º MBR735-MBR745 MBR750-MBR760 100 120 140 0 100 Pulse Duration [s] MBR735 - MBR760, Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...