ISL9R8120S3ST Fairchild Semiconductor, ISL9R8120S3ST Datasheet
ISL9R8120S3ST
Specifications of ISL9R8120S3ST
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ISL9R8120S3ST Summary of contents
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... CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation Features • ...
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... Maximum Reverse Recovery Current RM(REC) Q Reverse Recovered Charge RR dI /dt Maximum di/dt during t M Thermal Characteristics R Thermal Resistance Junction to Case JC R Thermal Resistance Junction to Ambient TO-220, TO-263 JA ©2002 Fairchild Semiconductor Corporation Package TO-220AC TO-263AB T = 25°C unless otherwise noted C Test Conditions V = 1200V 10V, I ...
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... V = 780V 125 FORWARD CURRENT (A) F Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2002 Fairchild Semiconductor Corporation 1000 100 125 C 0.1 0.01 3.0 3.5 4.0 4.5 200 Figure 2. Reverse Current vs Reverse Voltage 500 450 400 350 300 250 200 150 100 200 ...
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... CURRENT RATE OF CHANGE (A/µs) F Figure 7. Reverse Recovery Softness Factor vs dI /dt F 500 400 300 200 100 0 0.03 0 REVERSE VOLTAGE (V) R Figure 9. Junction Capacitance vs Reverse Voltage ©2002 Fairchild Semiconductor Corporation 2000 780V 125 780V 1800 1600 1400 1200 1000 800 600 400 ...
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... Figure 13. It Test Circuit 40mH R < 0 50V 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation - RECTANGULAR PULSE DURATION ( CURRENT 0 SENSE + Figure 14 Figure 16. Avalanche Current and Voltage P DM ...
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CROSSVOLT â â â â Rev. H5 ...