ISL9R8120S3ST Fairchild Semiconductor, ISL9R8120S3ST Datasheet

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ISL9R8120S3ST

Manufacturer Part Number
ISL9R8120S3ST
Description
DIODE STEALTH 1200V 8A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet

Specifications of ISL9R8120S3ST

Voltage - Forward (vf) (max) @ If
3.3V @ 8A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
300ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9R8120S3ST
Quantity:
800
©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth™ Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (I
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
Device Maximum Ratings
Package
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
T
Symbol
(BOTTOM SIDE
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
J
V
I
T
E
I
I
F(AV)
, T
FRM
RWM
FSM
RRM
V
P
T
PKG
AVL
CATHODE
R
D
L
METAL)
STG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
RM(REC)
JEDEC TO-220AC
RM(REC)
and short t
) and exceptionally soft
.
a
phase reduce loss
ANODE
T
C
CATHODE
= 25°C unless otherwise noted
Parameter
C
= 105
o
C)
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
ANODE
N / C
JEDEC TO-263AB
CATHODE
(FLANGE)
-55 to 150
Ratings
ISL9R8120P2 / ISL9R8120S3S Rev. A
1200
1200
1200
100
300
260
16
71
20
8
Symbol
May 2002
b
/ t
rr
Units
< 32ns
a
mJ
°C
°C
°C
K
A
W
V
V
V
A
A
A
> 5.5
o
C

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ISL9R8120S3ST Summary of contents

Page 1

... CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation Features • ...

Page 2

... Maximum Reverse Recovery Current RM(REC) Q Reverse Recovered Charge RR dI /dt Maximum di/dt during t M Thermal Characteristics R Thermal Resistance Junction to Case JC R Thermal Resistance Junction to Ambient TO-220, TO-263 JA ©2002 Fairchild Semiconductor Corporation Package TO-220AC TO-263AB T = 25°C unless otherwise noted C Test Conditions V = 1200V 10V, I ...

Page 3

... V = 780V 125 FORWARD CURRENT (A) F Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2002 Fairchild Semiconductor Corporation 1000 100 125 C 0.1 0.01 3.0 3.5 4.0 4.5 200 Figure 2. Reverse Current vs Reverse Voltage 500 450 400 350 300 250 200 150 100 200 ...

Page 4

... CURRENT RATE OF CHANGE (A/µs) F Figure 7. Reverse Recovery Softness Factor vs dI /dt F 500 400 300 200 100 0 0.03 0 REVERSE VOLTAGE (V) R Figure 9. Junction Capacitance vs Reverse Voltage ©2002 Fairchild Semiconductor Corporation 2000 780V 125 780V 1800 1600 1400 1200 1000 800 600 400 ...

Page 5

... Figure 13. It Test Circuit 40mH R < 0 50V 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation - RECTANGULAR PULSE DURATION ( CURRENT 0 SENSE + Figure 14 Figure 16. Avalanche Current and Voltage P DM ...

Page 6

CROSSVOLT â â â â Rev. H5 ...

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