DIODE FAST 16A 100V TO220AC

FES16BT

Manufacturer Part NumberFES16BT
DescriptionDIODE FAST 16A 100V TO220AC
ManufacturerFairchild Semiconductor
FES16BT datasheet
 


Specifications of FES16BT

Voltage - Forward (vf) (max) @ If950mV @ 8AVoltage - Dc Reverse (vr) (max)100V
Current - Average Rectified (io)16ACurrent - Reverse Leakage @ Vr10µA @ 100V
Diode TypeStandardSpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35nsCapacitance @ Vr, F170pF @ 4V, 1MHz
Mounting TypeThrough HolePackage / CaseTO-220-2, TO-220AC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
Page 1/3

Download datasheet (50Kb)Embed
Next
FES16AT - FES16JT
Features
Low forward voltage drop.
High surge current capacity.
High current capability.
High reliability.
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
Parameter
V
Maximum Repetitive Reverse
RRM
Voltage
I
Average Rectified Forward Current,
F(AV)
.375 " lead length @ T
I
Non-repetitive Peak Forward Surge
FSM
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
T
stg
T
Operating Junction Temperature
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
P
Power Dissipation
D
Thermal Resistance, Junction to Ambient
R
JA
Thermal Resistance, Junction to Lead
R
JL
Electrical Characteristics
Symbol
Parameter
V
Forward Voltage @ 8.0A
F
t
Reverse Recovery Time
rr
I
= 0.5 A, I
= 1.0 A, I
F
R
RR
I
Reverse Current @ rated V
R
T
= 25 C
A
T
= 100 C
A
C
Total Capacitance
T
V
= 4.0. f = 1.0 MHz
R
2001 Fairchild Semiconductor Corporation
1
2
TO-220AC
T
= 25°C unless otherwise noted
A
16AT
16BT
16CT
16DT
50
100
150
200
= 100 C
A
-65 to +150
-65 to +150
T
= 25°C unless otherwise noted
A
Device
16AT
16BT
16CT
16DT
0.95
35
= 0.25 A
R
170
PIN 1
+
CASE
PIN 3
Case Positive
PIN 1
-
PIN 3
Case Negative
Suffix "R"
Value
Units
16FT
16GT
16HT
16JT
300
400
500
600
16
250
pF
Value
Units
7.81
W
16
C/W
1.2
C/W
Units
16FT
16GT
16HT
16JT
1.3
1.5
V
50
ns
10
500
pF
145
FES16AT - FES16JT, Rev. C
V
A
A
V
A
A

FES16BT Summary of contents

  • Page 1

    ... Reverse Recovery Time 0 1 Reverse Current @ rated 100 Total Capacitance 4. 1.0 MHz R 2001 Fairchild Semiconductor Corporation 1 2 TO-220AC T = 25°C unless otherwise noted A 16AT 16BT 16CT 16DT 50 100 150 200 = 100 C A -65 to +150 -65 to +150 T = 25°C unless otherwise noted A Device ...

  • Page 2

    ... Forward Voltage, V Figure 3. Forward Voltage Characteristics 50 50 NONINDUCTIVE NONINDUCTIVE DUT 50V (approx) 50 NONINDUCTIVE Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 250 200 150 100 50 0 125 150 175 Figure 2. Non-Repetitive Surge Current 1000 100 10 1 ...

  • Page 3

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...