HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet
HGTG30N60C3D
Specifications of HGTG30N60C3D
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HGTG30N60C3D Summary of contents
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... UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... CE(PK 600V 60 CE(PK CES V = 15V - 20V - CES UNITS µs µs TYP MAX UNITS - - µA - 250 - 3.0 mA 1.5 1.8 V 1.7 2.0 V 5.2 6.0 V ±100 - 8 162 180 nC 216 250 320 400 ns 230 275 ns µJ 1050 - µJ 2500 - 1.75 2.2 V HGTG30N60C3D Rev. B ...
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... V , COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Unless Otherwise Specified SYMBOL TEST CONDITIONS 30A 1.0A IGBT θJC Diode = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for - 150 MIN TYP /dt = 100A/µ /dt = 100A/µs ...
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... T = 150 3Ω 100µ 400 300 200 100 COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 500 450 400 I SC 350 300 250 200 t SC 150 100 480V CE(PK 15V 10V 480V CE(PK 10V 15V HGTG30N60C3D Rev. B ...
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... V , COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 14. SWITCHING SAFE OPERATING AREA I = 3.54mA (REF) 600 480 V = 600V CE 360 V = 400V CE 240 V = 200V CE 120 120 Q , GATE CHARGE (nC) G FIGURE 16. GATE CHARGE WAVEFORMS = 480V CE(PK 400 500 600 o = 20Ω 160 200 HGTG30N60C3D Rev. B ...
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... Figure 17. SOA Characteristics 0 10 0.5 0.2 0 0.05 0.02 0.01 SINGLE PULSE - Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D (continued) µ µ 100 s 1ms 10ms DC 100 1000 [ RECTANGULAR PULSE DURATION ( DUTY FACTOR PEAK θJC θ HGTG30N60C3D Rev. B ...
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... L = 100µH RHRP3060 R = 3Ω G Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D (continued) 2.0 2.5 3.0 Figure 20. RECOVERY TIME vs FORWARD CURRENT 480V /dt = 100A/µ FORWARD CURRENT ( OFF ON 90% 10% t d(OFF Figure 22. SWITCHING TEST WAVEFORMS d(ON)I HGTG30N60C3D Rev. B ...
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... Figure 21. D(OFF)I D(ON )/(E MAX2 D C OFF ) is defined 50% duty factor was used (Figure 13 are approximated )/ are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and 0 MAX1 + t ). D(ON D(OFF The )/R . θ the OFF ; i.e. the OFF HGTG30N60C3D Rev. B ...