FGH20N60UFDTU Fairchild Semiconductor, FGH20N60UFDTU Datasheet - Page 5

• Manufacturer Part Number: FGH20N60UFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60UFD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
2500
2000
1500
1000
0.01
500
100
0.1
20
16
12
10
8
4
0
0
1
0.1
0
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
I
C
20A
= 10A
C
C
C
ies
10
res
oes
8
1
40A
12
Common Emitter
V
T
Common Emitter
T
GE
C
100
C
= 25
GE
= 0V, f = 1MHz
= 25
CE
10 ms
100
[V]
1ms
o
CE
[V]
GE
DC
C
o
16
C
10
[V]
µ
s
10
µ
s
1000
20
30
5
Figure 8. Saturation Voltage vs. V
Figure 10. Gate charge Characteristics
100
Figure 12. Turn-on Characteristics vs.
15
12
10
20
16
12
9
6
3
0
5
8
4
0
0
0
0
Common Emitter
T
C
= 25
10
o
I
C
C
4
V
Gate-Emitter Voltage, V
= 10A
CC
20
Gate Resistance, R
t
= 100V
r
t
Gate Charge, Q
d(on)
20
Gate Resistance
8
40
30
20A
Common Emitter
V
I
T
T
C
CC
C
C
12
= 20A
g
= 25
= 125
= 400V, V
[nC]
40
Common Emitter
T
200V
G
C
300V
o
[
GE
C
o
40A
Ω
= 125
C
60
]
[V]
16
GE
o
50
GE
C
= 15V
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80
60
20