FGA15N120FTDTU Fairchild Semiconductor, FGA15N120FTDTU Datasheet

IGBT 1200V 15A TO-3PN

FGA15N120FTDTU

Manufacturer Part Number
FGA15N120FTDTU
Description
IGBT 1200V 15A TO-3PN
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA15N120FTDTU.pdf (9 pages)

Specifications of FGA15N120FTDTU

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 25 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
FGA15N120FTDTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGA15N120FTD
1200V, 15A Field Stop Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS complaint
Applications
• Induction heating and Microwave oven
• Soft switching applications
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
CE(sat)
C
E
=1.58V @ I
Description
Parameter
TO-3PN
C
= 15A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggeness. This device is designed for soft switching applica-
tions.
o
o
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
220
300
30
15
45
15
90
88
Max.
0.57
62.5
2.1
C
E
January 2008
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
A
C
C
C
tm

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FGA15N120FTDTU Summary of contents

Page 1

... R (Diode) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V = 15A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggeness ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGA15N120FTD FGA15N120FTDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter Saturation Voltage CE(sat) ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cyrrent rr Q Diode Reverse Recovery Charge rr FGA15N120FTD Rev 25°C unless otherwise noted ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 20V 17V 90 15V Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 100 Common Emitter V = ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 15A 10A Gate-Emitter Voltage, V Figure 9. Gate charge Characteristics 15 Common Emitter ...

Page 6

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 600 Common Emitter Ω 15V 125 C C 100 Collector ...

Page 7

Typical Performance Characteristics Figure 19. Reverse Recovery Current 40 200A Forward Current, I Figure 21.Reverse Recovery Time 800 µ di/dt = 100A/ s 600 200A/ 400 200 Forward Current, I ...

Page 8

Mechanical Dimensions FGA15N120FTD Rev. A TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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