FGA50N100BNTDTU Fairchild Semiconductor, FGA50N100BNTDTU Datasheet
FGA50N100BNTDTU
Specifications of FGA50N100BNTDTU
Related parts for FGA50N100BNTDTU
FGA50N100BNTDTU Summary of contents
Page 1
... Thermal Resistance, Junction-to-Case θJC R (DIODE) Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation 1000V, 50A NPT-Trench IGBT CO-PAK Features • High Speed Switching • Low Saturation Voltage : V • High Input Impedance • Built-in Fast Recovery Diode TO- 25° ...
Page 2
... Package Marking and Ordering Information Device Marking Device FGA50N100BNTD FGA50N100BNTDTU Electrical Characteristics of IGBT Symbol Parameter Off Characteristics BV Collector Emitter Breakdown Voltage CES I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) Collector to Emitter V CE(sat) Saturation Voltage Dynamic Characteristics ...
Page 3
... V =15V - Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level 30A 60A 4 80A 10A Gate-Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2008Fairchild Semiconductor Corporation 200 20V 15V Common Emitter V 10V Tc= 25 160 Tc=125 9V 120 = [V] CE Fig 2. Typical Saturation Voltage Characteristics 10 8 80A ...
Page 4
... Fig 9. Switching Characteristics vs. Collector Current Ic MAX (Pulsed) 100 Ic MAX (Continuous Operation 1 Single Nonrepetitive 0.1 o Pulse Curves must be derated linearly with increase in temperature 0.01 0 Collector - Emitter Voltage, V Fig 11. SOA Characteristics ©2008Fairchild Semiconductor Corporation 10000 Cies 1000 Coes Cres 100 [V] CE Fig 8. Switching Characteristics vs ...
Page 5
... I rr 0.6 0 Forward Current, I Fig 15. Reverse Recovery Characteristics vs. Forward Current 250 200 150 100 50 0 0.1 1 Reverse Voltage, V Fig 17. Junction capacitance ©2008Fairchild Semiconductor Corporation 1.2 1.0 0 0.6 0.4 0.2 0.0 1.5 2.0 2.5 0 [V] FM Fig 14. Reverse Recovery Characteristics di/dt=-20A/ =25 C 1000 ...
Page 6
... Fairchild Semiconductor Corporation Dimensions in Millimeters FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Rev. A1 ...
Page 7
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...