FGA50N100BNTTU Fairchild Semiconductor, FGA50N100BNTTU Datasheet

IGBT NPT 1000V 50A TO-3P

FGA50N100BNTTU

Manufacturer Part Number
FGA50N100BNTTU
Description
IGBT NPT 1000V 50A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA50N100BNTTU.pdf (8 pages)

Specifications of FGA50N100BNTTU

Igbt Type
NPT and Trench
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 60A
Current - Collector (ic) (max)
50A
Power - Max
156W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±25V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FGA50N100BNT Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
FGA50N100BNT
1000V, 50A NPT-Trench IGBT CO-PAK
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• RoHS Compliant
Applications
•
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJA
UPS, PFC, I-H Jar, Induction Heater, Home Appliance.
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
= 2.5 V @ I
TO-3P
Description
Parameter
C
= 60A
@ T
@ T
@ T
@ T
C
C
C
C
1
= 25
= 100
= 25
= 100
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for UPS, PFC, I-H
Jar, induction Heater and Home Appliance.
o
o
C
C
o
o
C
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
1000
± 25
200
156
300
50
35
63
Max.
40.0
0.8
www.fairchildsemi.com
March 2009
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGA50N100BNTTU Summary of contents

Page 1

... Thermal Characteristics Symbol R (IGBT) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGA50N100BNT Rev. A General Description Trench insulated gate bipolar transistors (IGBTs) with NPT = 2 60A technology show outstanding performance in conduction and C switching characteristics as well as enhanced avalanche ruggedness ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGA50N100BNT FGA50N100BNTTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter Saturation Voltage CE(sat) ...

Page 3

Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 o 20V 10V 15V 160 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter V = ...

Page 4

Typical Performance Characteristics Figure 7. Saturation Voltage vs 60A 8 30A 90A 10A Gate-Emitter Voltage, V Figure 9. Capacitance Characteristics 8000 6000 C ies 4000 2000 C C ...

Page 5

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance 300 100 d(on) Common Emitter Gate Resistance, R Figure 15. Turn-on Characteristics vs. Collector Current 200 100 10 10 ...

Page 6

Typical Performance Characteristics Figure 19. Turn off Switching SOA Characterisics 250 100 10 Safe Operating Area 15V 125 100 Collector-Emitter Voltage 0.5 0.2 0.1 0.1 0.05 0.02 ...

Page 7

Mechanical Dimensions FGA50N100BNT Rev. A TO-3PN 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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