HGTG10N120BND Fairchild Semiconductor, HGTG10N120BND Datasheet - Page 5

• Manufacturer Part Number: HGTG10N120BND
• Description: IGBT N-CH NPT 1200V 35A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG10N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 17 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
100
40
35
30
25
20
15
80
60
40
20
400
350
300
250
200
150
100
0
0
7
0
R
T
FIGURE 13. TRANSFER CHARACTERISTIC
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
J
G
= 25
= 10Ω, L = 2mH, V
T
V
EMITTER CURRENT
EMITTER CURRENT
C
I
8
GE
I
CE
o
CE
= 150
C, T
, COLLECTOR TO EMITTER CURRENT (A)
= 12V, V
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
J
o
5
= 150
9
5
C
, GATE TO EMITTER VOLTAGE (V)
T
C
GE
= 25
o
C, V
V
= 15V, T
10
CE
GE
o
T
CE
C
GE
= 960V
J
= 12V, V
T
= 25
R
= 20V
C
= 12V
10
G
10
J
11
= -55
= 25
= 10Ω, L = 2mH, V
o
C, T
GE
o
o
C
J
C
12
= 15V, T
= 150
Unless Otherwise Specified (Continued)
o
15
15
13
C, V
J
= 150
GE
CE
= 15V
o
14
= 960V
C
20
20
15
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
20
15
10
5
0
300
250
200
150
100
50
40
30
20
10
50
0
0
0
0
I
G (REF)
R
FIGURE 14. GATE CHARGE WAVEFORMS
G
= 10Ω, L = 2mH, V
T
EMITTER CURRENT
CURRENT
I
J
CE
I
20
CE
= 1mA, R
= 25
V
, COLLECTOR TO EMITTER CURRENT (A)
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
o
= 1200V
J
C, V
5
V
5
= 25
CE
Q
L
GE
40
G
= 60Ω, T
= 400V
o
T
, GATE CHARGE (nC)
C, T
= 12V OR 15V
T
J
CE
J
= 150
= 25
J
V
= 960V
= 150
CE
R
C
o
60
10
o
G
10
= 25
C OR T
C, V
= 800V
= 10Ω, L = 2mH, V
o
C, V
GE
o
C
J
GE
= 12V OR 15V
= 150
80
= 12V
HGTG10N120BND Rev. B
o
15
15
C, V
100
GE
CE
= 960V
= 15V
20
120
20