HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet

IGBT NPT N-CH 1200V 72A TO-247

HGTG27N120BN

Manufacturer Part Number
HGTG27N120BN
Description
IGBT NPT N-CH 1200V 72A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG27N120BN

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 27A
Current - Collector (ic) (max)
72A
Power - Max
500W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.45 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
72 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
72 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
72A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
500W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG27N120BN
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
HGTG27N120BN
Quantity:
1 350
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are Non-
Punch Through (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49280.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
©2004 Fairchild Semiconductor Corporation
HGTG27N120BN
HGT5A27N120BN
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
TO-247-ST
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G27N120BN
27N120BN
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
HGTG27N120BN / HGT5A27N120BN
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 72A, 1200V, T
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
• Avalanche Rated
Packaging
Temperature Compensating SABER™ Model
www.fairchildsemi.com
(BOTTOM SIDE
(BOTTOM SIDE
COLLECTOR
COLLECTOR
METAL)
METAL)
October 2004
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
C
JEDEC STYLE TO-247-ST
= 25
JEDEC STYLE TO-247
o
C
HGTG27N120BN / HGT5A27N12BN Rev. C2
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
E
E
C
C
G
4,587,713
4,644,637
4,801,986
4,883,767
G
J
= 150
o
C

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HGTG27N120BN Summary of contents

Page 1

... Data Sheet 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... J STG 260 MIN TYP 1200 - 125 C - 300 150 2. 150 15V, 150 - GE = 1200V - 9.2 CES V = 15V - 270 20V - 350 195 - 80 - 2.2 - 2.7 - 2.3 HGTG27N120BN / HGT5A27N12BN Rev. C2 UNITS MAX UNITS - 250 2 250 325 nC 420 240 ns 120 3.3 mJ 2.8 mJ ...

Page 3

... L = 200 200 400 600 800 1000 V , COLLECTOR TO EMITTER VOLTAGE ( 960V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG27N120BN / HGT5A27N12BN Rev. C2 MAX UNITS 280 ns 200 6 0.25 C/W ON2 1200 1400 500 I SC 400 300 200 t SC ...

Page 4

... FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO DUTY CYCLE <0.5 15V GE 250 s PULSE TEST - COLLECTOR TO EMITTER VOLTAGE ( 1mH 960V 150 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 1mH 960V 150 12V 150 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG27N120BN / HGT5A27N12BN Rev 150 12V OR 15V 15V ...

Page 5

... Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 40 o DUTY CYCLE <0.5 110 C C 250 s PULSE TEST 15V 0.5 1.0 1.5 2.0 2 COLLECTOR TO EMITTER VOLTAGE (V) CE HGTG27N120BN / HGT5A27N12BN Rev 12V OR 15V 800V CE 250 300 V = 10V GE 3.0 3.5 4.0 4.5 ...

Page 6

... Test Circuit and Waveforms RHRP30120 L = 1mH FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N120BN Unless Otherwise Specified (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( 960V 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTG27N120BN / HGT5A27N12BN Rev ...

Page 7

... OFF is the integral of the ON2 during turn-on and the integral of the instantaneous power loss ) during turn-off. All tail losses are included i.e., the collector current equals OFF = 0). CE HGTG27N120BN / HGT5A27N12BN Rev d(ON d(OFF The ON2 - T )/ ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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