IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet - Page 10

IGBT 1200V 30A 235W TO247-3

IKW15N120T2

Manufacturer Part Number
IKW15N120T2
Description
IGBT 1200V 30A 235W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW15N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
235W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
235W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW15N120T2
Manufacturer:
INFINEON
Quantity:
240
Part Number:
IKW15N120T2
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKW15N120T2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW15N120T2
0
Company:
Part Number:
IKW15N120T2
Quantity:
7 200
Part Number:
IKW15N120T2 K15T1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW15N120T2FKSA1
Manufacturer:
INFINEON
Quantity:
1 001
Power Semiconductors
10
10
25A
20A
15A
10A
Figure 21. Typical turn on behavior
10
Figure 23. IGBT transient thermal resistance
5A
0A
-1
-2
0
0us
K/W
K/W
K/W
V
I
C
CE
10µs
D=0.5
0.05
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
0.4us
GE
100µs
=0/15V, R
t
p
single pulse
P
0.02
0.01
,
/ T)
PULSE WIDTH
t,
0.8us
TIME
1ms
R
0.143
0.217
0.258
0.017
G
R , ( K / W )
1
=41.8Ω, T
C
1
=
1
/ R
1.2us
10ms
1
C
3.06*10
3.47*10
1.71*10
2.63*10
j
2
= 175 C,
=
, ( s )
2
/ R
100ms
TrenchStop
R
2
-4
-3
-2
-1
2
600V
400V
200V
0V
10
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal
15A
10A
5A
0A
10
10
10
®
0us
-1
-2
V
0
I
2
K/W
K/W
K/W
C
CE
nd
10µs
generation Series
D=0.5
0.05
0.2
0.1
(V
Dynamic test circuit in Figure E)
impedance as a function of pulse
width
(D=t
0.4us
GE
P
=15/0V, R
100µs
/T)
t
single pulse
P
0.01
0.02
,
IKW15N120T2
PULSE WIDTH
t,
0.8us
TIME
G
1ms
=41.8Ω, T
R
0.291
0.434
0.363
0.028
R , ( K / W )
1
C
1
=
1.2us
1
Rev. 2.1
/ R
10ms
1
j
C
= 175 C,
2.75*10
2.60*10
1.48*10
1.78*10
2
=
, ( s )
2
/ R
100ms
Sep 08
R
2
-4
-3
-2
-1
600V
400V
200V
0V
2

Related parts for IKW15N120T2