IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet - Page 8

• Manufacturer Part Number: IKW15N120T2
• Description: IGBT 1200V 30A 235W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW15N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 235W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 235W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
2.4mJ
1.2mJ
0.0mJ
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
7.5mJ
5.0mJ
2.5mJ
0.0mJ
*) E
*) E
due to diode recovery
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
on
due to diode recovery
0°C
J
I
CE
GE
on
,
C
and E
,
JUNCTION TEMPERATURE
7.5A
and E
=600V, V
=0/15V, I
COLLECTOR CURRENT
ts
ts
include losses
include losses
50°C
C
15.0A
GE
=15A, R
=0/15V, R
J
CE
=175°C,
=600V,
100°C
G
22.5A
=41.8Ω,
G
=41.8Ω,
150°C
TrenchStop
E
E
E
E
E
E
on
ts
on
off
ts
off
*
*
*
*
8
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
5.00mJ
3.75mJ
2.50mJ
1.25mJ
0.00mJ
5.00 mJ
3.75 mJ
2.50 mJ
1.25 mJ
0.00 mJ
®
2
nd
400V
V
generation Series
CE
*) E
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
CE
GE
COLLECTOR
due to diode recovery
*) E
on
=600V, V
=0/15V, I
due to diode recovery
R
and E
on
500V
G
,
and E
IKW15N120T2
GATE RESISTOR
ts
include losses
ts
-
C
GE
EMITTER VOLTAGE
include losses
=15A, R
=0/15V, I
600V
J
J
=175°C,
=175°C,
Rev. 2.1
G
=41.8Ω,
C
=15A,
700V
Sep 08
E
E
E
E
on
ts
E
E
off
*
*
ts
on
off
*
*