IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet - Page 6

• Manufacturer Part Number: IKW15N120T2
• Description: IGBT 1200V 30A 235W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW15N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 235W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 235W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
60A
50A
40A
30A
20A
10A
0A
60A
50A
40A
30A
20A
10A
0A
0V
0V
V
V
GE
CE
=17V
11V
15V
13V
V
20V
,
(T
2V
(V
9V
7V
COLLECTOR
GE
1V
j
CE
= 25°C)
,
T
GATE-EMITTER VOLTAGE
=20V)
J
4V
=175°C
25°C
2V
6V
-
EMITTER VOLTAGE
8V
3V
10V
4V
12V
TrenchStop
6
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
60A
50A
40A
30A
20A
10A
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
®
0A
2
0V
nd
V
V
GE
generation Series
CE
=17V
11V
20V
15V
13V
(T
saturation voltage as a function of
junction temperature
(V
T
,
9V
7V
COLLECTOR
J
j
1V
GE
,
0°C
= 175°C)
JUNCTION TEMPERATURE
= 15V)
IKW15N120T2
2V
50°C
-
EMITTER VOLTAGE
3V
Rev. 2.1
100°C
4V
I
I
C
C
I
I
=30A
C
=7.5A
C
150°C
=15A
=2A
Sep 08