IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet - Page 3

IGBT 1200V 30A 235W TO247-3

IKW15N120T2

Manufacturer Part Number
IKW15N120T2
Description
IGBT 1200V 30A 235W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW15N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
235W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
235W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW15N120T2
Manufacturer:
INFINEON
Quantity:
240
Part Number:
IKW15N120T2
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKW15N120T2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW15N120T2
0
Company:
Part Number:
IKW15N120T2
Quantity:
7 200
Part Number:
IKW15N120T2 K15T1202
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW15N120T2FKSA1
Manufacturer:
INFINEON
Quantity:
1 001
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
2)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
1)
C
C
C
Q
L
I
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
C ( S C )
d ( o n )
r
d ( o f f )
f
r r
r r m
E
o n
o f f
t s
i s s
o s s
r s s
G a t e
r r
r r
/ d t
TrenchStop
j
=25 C
3
V
V
f=1MHz
V
V
V
V
T
T
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j , s t a r t
j , s t a r t
j
j
C E
G E
C C
G E
G E
C C
C C
G E
R
G
= 25 C ,
= 25 C ,
F
2 )
2 )
= 60 0 V , I
= 4 1 .8 ,
/d t= 450A/ s
=25V,
= 0 V ,
= 96 0 V, I
=15V
=15V,t
= 60 0 V, I
= 0 /1 5 V,
=1 26nH,
=34pF
= 600 V,
Conditions
= 2 5 C
= 1 75 C
®
2
S C
nd
F
C
=15A,
C
=15A,
generation Series
=40A
1 0 s
min.
IKW15N120T2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
1000
1.25
2.05
typ.
100
362
300
215
0.8
1.3
56
93
13
82
60
32
25
95
10
Rev. 2.1
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Sep 08
pF
nC
nH
A
Unit
ns
mJ
ns
µC
A
A/ s

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